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Band Offsets of InAsxP1−X/InP Strained Layer Quantum Wells Grown by Lp-Movpe Using TBAs
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ABSTRACTLow temperature optical absorption spectra are presented for a series of InAsxP1-x/InP strained layer multiple quantum well structures (0 < x = 0.35) grown by low pressure metal organic vapor phase epitaxy (LP-MOVPE) using trimethylindium (TMIn), tertiarybutylarsine (TBAs) and phosphine as precursors. The well widths and compositions in these structures are determined from high resolution x-ray diffraction and transmission electron microscopy. The absorption spectra are then analyzed by fitting the excitonic peak energy position with transition energies determined from a solution to the Schrödinger equation. We used the envelope function formalism with the Kane bands as the basis wavefunctions and included corrections for non parabolicity. From these fits and elasticity theory, both the bandgap of unstrained InAsxP1-x and the band offsets of these heterostructures are deduced self-consistently. The conduction band offsets are found between 72% and 75% of the total strained bandgap differences.
Springer Science and Business Media LLC
Title: Band Offsets of InAsxP1−X/InP Strained Layer Quantum Wells Grown by Lp-Movpe Using TBAs
Description:
ABSTRACTLow temperature optical absorption spectra are presented for a series of InAsxP1-x/InP strained layer multiple quantum well structures (0 < x = 0.
35) grown by low pressure metal organic vapor phase epitaxy (LP-MOVPE) using trimethylindium (TMIn), tertiarybutylarsine (TBAs) and phosphine as precursors.
The well widths and compositions in these structures are determined from high resolution x-ray diffraction and transmission electron microscopy.
The absorption spectra are then analyzed by fitting the excitonic peak energy position with transition energies determined from a solution to the Schrödinger equation.
We used the envelope function formalism with the Kane bands as the basis wavefunctions and included corrections for non parabolicity.
From these fits and elasticity theory, both the bandgap of unstrained InAsxP1-x and the band offsets of these heterostructures are deduced self-consistently.
The conduction band offsets are found between 72% and 75% of the total strained bandgap differences.
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