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GaN HEMT decoupling circuit for MR receive coil
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Motivation: Low-power circuits are key to miniaturizing MR receive coil electronics for improved flexibility and reduced weight. GaN HEMT decoupling circuits offer a promising alternative to PIN diodes. Goal(s): This research evaluates GaN HEMT decoupling circuits, comparing them to traditional PIN diode circuits, while assessing potential risks and impacts on coil performance. Approach: Decoupling performance of GaN HEMTs from two manufacturers was tested under RF power, along with Hall Effect and switching time evaluations in MRI systems. Results: Current GaN HEMTs can't handle high RF currents like PIN diodes. A parallel passive diode is needed for protection and enhanced decoupling performance. Impact: This research identifies the limitations of existing GaN HEMTs in MR receive coil decoupling circuits. It proposes a hybrid decoupling circuit that integrates GaN HEMTs with passive switching diodes to achieve low-power decoupling in receive coils.
Title: GaN HEMT decoupling circuit for MR receive coil
Description:
Motivation: Low-power circuits are key to miniaturizing MR receive coil electronics for improved flexibility and reduced weight.
GaN HEMT decoupling circuits offer a promising alternative to PIN diodes.
Goal(s): This research evaluates GaN HEMT decoupling circuits, comparing them to traditional PIN diode circuits, while assessing potential risks and impacts on coil performance.
Approach: Decoupling performance of GaN HEMTs from two manufacturers was tested under RF power, along with Hall Effect and switching time evaluations in MRI systems.
Results: Current GaN HEMTs can't handle high RF currents like PIN diodes.
A parallel passive diode is needed for protection and enhanced decoupling performance.
Impact: This research identifies the limitations of existing GaN HEMTs in MR receive coil decoupling circuits.
It proposes a hybrid decoupling circuit that integrates GaN HEMTs with passive switching diodes to achieve low-power decoupling in receive coils.
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