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Advances for Enhanced GaN-Based HEMT Devices with p-GaN Gate
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With the development of high-voltage switches and high-speed RF circuits, the enhancement mode(E-mode) AlGaN/GaN HEMTs have become a hot topic in those fields. The E-mode GaN-based HEMTs have channel current at the positive gate voltage, greatly expanding the device in low power digital circuit applications. The main methods to realize E-mode AlGaN/GaN HEMT power devices are p-GaN gate technology, recessed gate structure, fluoride ion implantation technology and Cascode structure (Cascode). In this paper, the advantage and main realizable methods of E-mode AlGaN/GaN HEMT are briefly described. The research status and problems of E-mode AlGaN/GaN HEMT devices fabricated by p-GaN gate technology are summarized. The advances of p-GaN gate technology, and focuses on how these research results can improve the power characteristics and reliability of E-mode AlGaN/GaN HEMT by optimizing device structure and improving process technology, are discussed.
Trans Tech Publications, Ltd.
Title: Advances for Enhanced GaN-Based HEMT Devices with p-GaN Gate
Description:
With the development of high-voltage switches and high-speed RF circuits, the enhancement mode(E-mode) AlGaN/GaN HEMTs have become a hot topic in those fields.
The E-mode GaN-based HEMTs have channel current at the positive gate voltage, greatly expanding the device in low power digital circuit applications.
The main methods to realize E-mode AlGaN/GaN HEMT power devices are p-GaN gate technology, recessed gate structure, fluoride ion implantation technology and Cascode structure (Cascode).
In this paper, the advantage and main realizable methods of E-mode AlGaN/GaN HEMT are briefly described.
The research status and problems of E-mode AlGaN/GaN HEMT devices fabricated by p-GaN gate technology are summarized.
The advances of p-GaN gate technology, and focuses on how these research results can improve the power characteristics and reliability of E-mode AlGaN/GaN HEMT by optimizing device structure and improving process technology, are discussed.
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