Search engine for discovering works of Art, research articles, and books related to Art and Culture
Javascript must be enabled to continue!
AlGaAs/GaAs HBTs FOR ANALOG AND DIGITAL APPLICATIONS
View through CrossRef
AlGaAs/GaAs Heterojunction Bipolar Transistor (HBT) technology has emerged as an important IC technology for high performance electronic systems. Many outstanding circuits have been demonstrated as a result of the AlGaAs/GaAs HBTs high speed, high accuracy and its semi-insulating substrate. Several GaAs HBT manufacturing lines have been established; some of which are shipping products. In this paper, we describe AlGaAs/GaAs HBT technology, summarize some key and representative circuits in analog, A/D conversion and digital applications, and provide prospects of GaAs HBT research.
Title: AlGaAs/GaAs HBTs FOR ANALOG AND DIGITAL APPLICATIONS
Description:
AlGaAs/GaAs Heterojunction Bipolar Transistor (HBT) technology has emerged as an important IC technology for high performance electronic systems.
Many outstanding circuits have been demonstrated as a result of the AlGaAs/GaAs HBTs high speed, high accuracy and its semi-insulating substrate.
Several GaAs HBT manufacturing lines have been established; some of which are shipping products.
In this paper, we describe AlGaAs/GaAs HBT technology, summarize some key and representative circuits in analog, A/D conversion and digital applications, and provide prospects of GaAs HBT research.
Related Results
AlGaAs/GaAs and AlGaAs/InGaAs/GaAs High Electron Mobility Transistors Grown by Metalorganic Vapor Phase Epitaxy Using Tertiarybutylarsine
AlGaAs/GaAs and AlGaAs/InGaAs/GaAs High Electron Mobility Transistors Grown by Metalorganic Vapor Phase Epitaxy Using Tertiarybutylarsine
We demonstrate the first fabrication of AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistors (HEMTs) grown by metalorganic vapor phase epitaxy (MOVPE...
Transport and optical properties of AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs heterostructures subjected to CH4/H2 reactive ion etching
Transport and optical properties of AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs heterostructures subjected to CH4/H2 reactive ion etching
We investigate the effect of methane/hydrogen (CH4/H2) reactive ion etching (RIE) and a subsequent annealing process on AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs heterostruc...
Access Denied
Access Denied
Introduction
As social-distancing mandates in response to COVID-19 restricted in-person data collection methods such as participant observation and interviews, researchers turned t...
Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
Surface morphologies of GaAs layers grown on (775)B-oriented GaAs substrates by molecular beam epitaxy were studied using atomic force microscopy. The surface of a GaAs layer gr...
Enhancing analog circuit security through obfuscation
Enhancing analog circuit security through obfuscation
The focus of this dissertation is the safeguarding of analog circuits against IP piracy attacks, which includes the development of a novel method to secure analog IP, the assessmen...
Carbon-Doped-Base AlGaAs/GaAs HBTs Grown by Gas-Source Molecular Beam Epitaxy Using Only Gaseous Sources
Carbon-Doped-Base AlGaAs/GaAs HBTs Grown by Gas-Source Molecular Beam Epitaxy Using Only Gaseous Sources
We report the fabrication and electrical characteristics of carbon-doped-base AlGaAs/GaAs heterojunction bipolar transistors (HBTs) grown by gas-source molecular beam epitaxy (GSMB...
Photo-induced Dissociation and Optical Cross Section of Si-H and S-H Complexes in GaAs and AlGaAs
Photo-induced Dissociation and Optical Cross Section of Si-H and S-H Complexes in GaAs and AlGaAs
AbstractIn GaAs, (Si,H) complexes are efficiently dissociated at 300 K by photons with energies above 3.5 eV. Their optical cross-section is 10-19-10-18 cm2. This dissociation is t...
GaAs/Ge/GaAs Sublattice Reversal Epitaxy on GaAs (100) and (111) Substrates for Nonlinear Optical Devices
GaAs/Ge/GaAs Sublattice Reversal Epitaxy on GaAs (100) and (111) Substrates for Nonlinear Optical Devices
Sublattice reversal epitaxy is demonstrated in lattice-matched
GaAs/Ge/GaAs (100) and (111) systems using molecular beam epitaxy, and confirmed
by reflection high energy elec...