Search engine for discovering works of Art, research articles, and books related to Art and Culture
Javascript must be enabled to continue!
GaAs/Ge/GaAs Sublattice Reversal Epitaxy on GaAs (100) and (111) Substrates for Nonlinear Optical Devices
View through CrossRef
Sublattice reversal epitaxy is demonstrated in lattice-matched
GaAs/Ge/GaAs (100) and (111) systems using molecular beam epitaxy, and confirmed
by reflection high energy electron diffraction and preferential etching.
In the GaAs/Ge/GaAs (100) system, the sublattice reversal is
assisted by self-annihilation of the antiphase domains generated at the
GaAs/Ge interface. In the GaAs/Ge/GaAs (111) system, the sublattice reversal
results from the unique structure of the As-terminated Ge (111) surfaces.
The quality of the sublattice-reversed GaAs crystal is investigated
using cross-sectional transmission electron microscopy. A method to
fabricate a periodically domain-inverted structure using sublattice reversal
epitaxy is demonstrated for the GaAs/Ge/GaAs (100) system.
Title: GaAs/Ge/GaAs Sublattice Reversal Epitaxy on GaAs (100) and (111) Substrates for Nonlinear Optical Devices
Description:
Sublattice reversal epitaxy is demonstrated in lattice-matched
GaAs/Ge/GaAs (100) and (111) systems using molecular beam epitaxy, and confirmed
by reflection high energy electron diffraction and preferential etching.
In the GaAs/Ge/GaAs (100) system, the sublattice reversal is
assisted by self-annihilation of the antiphase domains generated at the
GaAs/Ge interface.
In the GaAs/Ge/GaAs (111) system, the sublattice reversal
results from the unique structure of the As-terminated Ge (111) surfaces.
The quality of the sublattice-reversed GaAs crystal is investigated
using cross-sectional transmission electron microscopy.
A method to
fabricate a periodically domain-inverted structure using sublattice reversal
epitaxy is demonstrated for the GaAs/Ge/GaAs (100) system.
Related Results
Evolution of Antimicrobial Resistance in Community vs. Hospital-Acquired Infections
Evolution of Antimicrobial Resistance in Community vs. Hospital-Acquired Infections
Abstract
Introduction
Hospitals are high-risk environments for infections. Despite the global recognition of these pathogens, few studies compare microorganisms from community-acqu...
Sublattice Reversal in GaAs/Si/GaAs (100) Heterostructures by Molecular Beam Epitaxy
Sublattice Reversal in GaAs/Si/GaAs (100) Heterostructures by Molecular Beam Epitaxy
Sublattice reversal in III-V compound semiconductors grown on
group-IV epitaxial layers on III-V substrates has been proposed for
fabricating nonlinear optical devices with d...
Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
Surface morphologies of GaAs layers grown on (775)B-oriented GaAs substrates by molecular beam epitaxy were studied using atomic force microscopy. The surface of a GaAs layer gr...
High-Temperature Metalorganic Vapor Phase Epitaxial Growth of GaAs/AlGaAs Quantum Structures in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates
High-Temperature Metalorganic Vapor Phase Epitaxial Growth of GaAs/AlGaAs Quantum Structures in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates
GaAs/AlGaAs quantum structures were grown in tetrahedral-shaped recesses (TSRs) on GaAs {111}B substrates at temperatures above 800°C by metalorganic vapor phase epitaxy because qu...
Growth and Characterization of GaAs/GaSe/Si Heterostructures
Growth and Characterization of GaAs/GaSe/Si Heterostructures
We have grown and characterized epitaxial GaAs grown on layered structure GaSe on As-passivated Si(111) for the purpose of using layered structure GaSe as a lattice mismatch/therma...
Highly Uniform GaAs/AlAs Quantum Wires Grown on [001] Ridges of GaAs(100) Patterned Substrates by Molecular Beam Epitaxy
Highly Uniform GaAs/AlAs Quantum Wires Grown on [001] Ridges of GaAs(100) Patterned Substrates by Molecular Beam Epitaxy
Highly uniform GaAs/AlAs ridge quantum well (QW) structures have been grown on ridges with various widths of about 0.1–1.3 µ m in the [001] direction on GaAs (100) patterned substr...
Nonlinear analysis of electro-acoustic frequency-selective devices for communications
Nonlinear analysis of electro-acoustic frequency-selective devices for communications
Nowadays, mobile devices have become a key technology in our lives, making us become part of a connected world, in which millions of mobile handsets are sold every year. In order t...
X-Ray Diffraction Study of ZnSe(111) Films Grown on GaAs(111)A Substrates by Molecular Beam Epitaxy
X-Ray Diffraction Study of ZnSe(111) Films Grown on GaAs(111)A Substrates by Molecular Beam Epitaxy
ZnSe(111) films grown on GaAs(111)A substrates were studied by X-ray diffraction measurement. The [111] axis of ZnSe epilayers was tilted toward the [100] direction when the ...