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Sublattice Reversal in GaAs/Si/GaAs (100) Heterostructures by Molecular Beam Epitaxy
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Sublattice reversal in III-V compound semiconductors grown on
group-IV epitaxial layers on III-V substrates has been proposed for
fabricating nonlinear optical devices with domain-inverted compound
semiconductor structures.
Sublattice reversal epitaxy is demonstrated in the GaAs/Si/GaAs (100)
system and confirmed by reflection high energy electron diffraction,
cross-sectional transmission electron microscopy, anisotropic etching,
and optical second-harmonic generation measurements.
The present sublattice reversal seems to be assisted by self
annihilation of antiphase domains generated at GaAs/Si interfaces.
IOP Publishing
Title: Sublattice Reversal in GaAs/Si/GaAs (100) Heterostructures by Molecular Beam Epitaxy
Description:
Sublattice reversal in III-V compound semiconductors grown on
group-IV epitaxial layers on III-V substrates has been proposed for
fabricating nonlinear optical devices with domain-inverted compound
semiconductor structures.
Sublattice reversal epitaxy is demonstrated in the GaAs/Si/GaAs (100)
system and confirmed by reflection high energy electron diffraction,
cross-sectional transmission electron microscopy, anisotropic etching,
and optical second-harmonic generation measurements.
The present sublattice reversal seems to be assisted by self
annihilation of antiphase domains generated at GaAs/Si interfaces.
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