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Characterization of GaInAs/InP Triple-Barrier Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy for High-Temperature Estimation of Phase Coherent Length of Electrons
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To estimate the phase coherent length(L
C) of electrons in semiconductor, triple-barrier resonant tunneling diodes (TBRTDs) with GaInAs/InP heterostructures were fabricated by using organo-metallic vapor phase epitaxy (OMVPE). The current density-voltage (J-V) characteristics were measured at 4.2 K and 77 K. Moreover method of comparison between experimental and theoretical results is proposed. By comparing experimental result with theoretical result, the coherent lengths are estimated to be longer than 90 nm and 55 nm at 4.2 K and 77 K respectively.
Title: Characterization of GaInAs/InP Triple-Barrier Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy for High-Temperature Estimation of Phase Coherent Length of Electrons
Description:
To estimate the phase coherent length(L
C) of electrons in semiconductor, triple-barrier resonant tunneling diodes (TBRTDs) with GaInAs/InP heterostructures were fabricated by using organo-metallic vapor phase epitaxy (OMVPE).
The current density-voltage (J-V) characteristics were measured at 4.
2 K and 77 K.
Moreover method of comparison between experimental and theoretical results is proposed.
By comparing experimental result with theoretical result, the coherent lengths are estimated to be longer than 90 nm and 55 nm at 4.
2 K and 77 K respectively.
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