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Improvement of Organometallic Vapor Phase Epitaxy Regrown GaInAs/InP Heterointerface by Surface Treatment
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It is shown that the combined surface treatment of a (NH4)2S
x
treatment and preheating improves the regrown heterointerface of n-GaInAs/i-InP in organometallic vapor phase epitaxy (OMVPE). Properties of the regrown heterointerface were evaluated from voltage-current (V-I) characteristics of the n-GaInAs/i-InP/n-GaInAs tunneling diode. This surface treatment is useful for the fabrication of ultrafine-size structures of quantum-wire, -box and electron wave devices.
Title: Improvement of Organometallic Vapor Phase Epitaxy Regrown GaInAs/InP Heterointerface by Surface Treatment
Description:
It is shown that the combined surface treatment of a (NH4)2S
x
treatment and preheating improves the regrown heterointerface of n-GaInAs/i-InP in organometallic vapor phase epitaxy (OMVPE).
Properties of the regrown heterointerface were evaluated from voltage-current (V-I) characteristics of the n-GaInAs/i-InP/n-GaInAs tunneling diode.
This surface treatment is useful for the fabrication of ultrafine-size structures of quantum-wire, -box and electron wave devices.
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