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Super-Flat Interfaces in Pseudomorphic InxGa1-xAs/Al0.28Ga0.72As Quantum Wells with High In Content (x = 0.15) Grown on (411)A GaAs Substrates by Molecular Beam Epitaxy
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Pseudomorphic In
x
Ga1-x
As/Al0.28Ga0.72As
(x = 0.085–0.15) quantum wells (QWs) with well widths of
1.2, 2.4, 3.6, 4.8, 7.2 and 12 nm have been grown
on (411)A and (100) GaAs substrates at a temperature
(T
s) of 520°C by molecular beam epitaxy (MBE).
The interface flatness of the QWs was
characterized by photoluminescence (PL) at 4.2 K.
PL linewidths of the narrow
(411)A QWs (L
w = 2.4 nm) with x = 0.085 and 0.15 were 7.3 meV which is
approximately 30–40% smaller than those of the (100) QWs, indicating that
extremely flat interfaces over a macroscopic area
[(411)A super-flat interfaces] have been realized in the pseudomorphic
In
x
Ga1-x
As/Al0.28Ga0.72As QWs (up to x = 0.15)
grown on the (411)A GaAs substrates, similar to lattice-matched
GaAs/Al
x
Ga1-x
As
QWs grown on (411)A GaAs substrate previously reported.
Title: Super-Flat Interfaces in Pseudomorphic InxGa1-xAs/Al0.28Ga0.72As Quantum Wells with High In Content (x = 0.15) Grown on (411)A GaAs Substrates by Molecular Beam Epitaxy
Description:
Pseudomorphic In
x
Ga1-x
As/Al0.
28Ga0.
72As
(x = 0.
085–0.
15) quantum wells (QWs) with well widths of
1.
2, 2.
4, 3.
6, 4.
8, 7.
2 and 12 nm have been grown
on (411)A and (100) GaAs substrates at a temperature
(T
s) of 520°C by molecular beam epitaxy (MBE).
The interface flatness of the QWs was
characterized by photoluminescence (PL) at 4.
2 K.
PL linewidths of the narrow
(411)A QWs (L
w = 2.
4 nm) with x = 0.
085 and 0.
15 were 7.
3 meV which is
approximately 30–40% smaller than those of the (100) QWs, indicating that
extremely flat interfaces over a macroscopic area
[(411)A super-flat interfaces] have been realized in the pseudomorphic
In
x
Ga1-x
As/Al0.
28Ga0.
72As QWs (up to x = 0.
15)
grown on the (411)A GaAs substrates, similar to lattice-matched
GaAs/Al
x
Ga1-x
As
QWs grown on (411)A GaAs substrate previously reported.
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