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Extremely Flat Interfaces in InxGa 1-xAs/Al 0.3Ga 0.7As Quantum Wells Grown on (411)A GaAs Substrates by Molecular Beam Epitaxy
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Effectively atomically flat interfaces over a macroscopic area (super-flat interfaces) have been achieved in pseudomorphic In
x
Ga1-x
As/Al0.3Ga0.7As (x = 0.0, 0.04, 0.07) quantum wells (QWs) with well widths (L
w) of 1.2–11.8 nm grown on (411)A GaAs substrates at 520°C by molecular beam epitaxy (MBE). A single, sharp photoluminescence (PL) peak was observed for each QW over the large area of the wafer (8 mm ×5 mm). The linewidths for narrow QWs (L
w = 2.4 nm) were 8.9 meV (x = 0.04) and 9.9 meV (x = 0.07) at 4.2 K, which were about 30% smaller than those of QWs simultaneously grown on conventional (100) GaAs substrates.
IOP Publishing
Title: Extremely Flat Interfaces in InxGa 1-xAs/Al 0.3Ga 0.7As Quantum Wells Grown on (411)A GaAs Substrates by Molecular Beam Epitaxy
Description:
Effectively atomically flat interfaces over a macroscopic area (super-flat interfaces) have been achieved in pseudomorphic In
x
Ga1-x
As/Al0.
3Ga0.
7As (x = 0.
0, 0.
04, 0.
07) quantum wells (QWs) with well widths (L
w) of 1.
2–11.
8 nm grown on (411)A GaAs substrates at 520°C by molecular beam epitaxy (MBE).
A single, sharp photoluminescence (PL) peak was observed for each QW over the large area of the wafer (8 mm ×5 mm).
The linewidths for narrow QWs (L
w = 2.
4 nm) were 8.
9 meV (x = 0.
04) and 9.
9 meV (x = 0.
07) at 4.
2 K, which were about 30% smaller than those of QWs simultaneously grown on conventional (100) GaAs substrates.
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