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Control of Thickness Variation in Si-on-Insulator Bonded Wafers by Applying Voltage during KOH Etching
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A new thinning technique is developed to control thickness variation in Si-on-insulator (SOI) bonded wafers. During KOH etching, voltage is applied between the supporting substrate and the etchant. Excellent SOI thickness variation of less than ±0.1 µm is achieved by etching 4±0.5 µm thick, 150 mmφ SOI bonded wafers. The resulting film thickness after etching is controlled from 0.8 to 2.6 µm by changing the applied voltage from 50 to 75 V.
Title: Control of Thickness Variation in Si-on-Insulator Bonded Wafers by Applying Voltage during KOH Etching
Description:
A new thinning technique is developed to control thickness variation in Si-on-insulator (SOI) bonded wafers.
During KOH etching, voltage is applied between the supporting substrate and the etchant.
Excellent SOI thickness variation of less than ±0.
1 µm is achieved by etching 4±0.
5 µm thick, 150 mmφ SOI bonded wafers.
The resulting film thickness after etching is controlled from 0.
8 to 2.
6 µm by changing the applied voltage from 50 to 75 V.
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