Pre‐low noise amplifier (LNA) filtering linearisation method for low‐power ultra‐wideband complementary metal oxide semiconductor LNA

This study describes the use of a pre‐low noise amplifier (LNA) third‐order notch filter as a novel linearity enhancement technique for ultra‐wideband complementary metal oxide semiconductor LNA current‐reuse topology. The second/third order input intercept point (IIP2/3) has improved along the entire working bandwidth (BW) from 2.1 to 12.5 GHz. The suggested linearisation technique achieves maximum/minimum IIP2 improvement from 19.068 to 104.143 dBm at 6.4 GHz and from 22.5 to 57.42 dBm at 5.5 GHz, respectively. In addition, this work achieves maximum/minimum IIP3 improvement from −7.956 to 34.688 dBm at 6.4 GHz and from −9.986 to 8.281 dBm, respectively. Moreover, the suggested linearisation technique does not affect the total ultra‐wideband (UWB)‐LNA power consumption, which is only 6.7 mW. Furthermore, the linearised UWB‐LNA average noise figure is 1.6535 dB at the entire working BW. The simulation is performed and optimised with an advanced design system utilising BSIM3v3 TSMC 180 nm model files at different temperature values.