Search engine for discovering works of Art, research articles, and books related to Art and Culture
Javascript must be enabled to continue!
GaN low-noise X-band MMIC amplifier.
View through CrossRef
The purpose of this paper is to design a microwave monolithic integrated circuit (MMIC) for low noise amplifier (LNA) X-band (7-12 GHz) based on technology of gallium nitride (GaN) high electron mobility transistor (HEMT) with a T-gate, which has 100 nm width, on a silicon (Si) semi-insulating substrate of the OMMIC company. The amplifier is based on common-source transistors with series feedback, which was formed by high-impedance transmission line, and with parallel feedback to match noise figure and power gain. The key characteristics of an LNA are noise figure and gain. However, in this paper, it was decided to design the LNA, which should have a good margin in terms of input and output power. As a result, GaN technology was chosen, which has a higher noise figure compared to other technologies, but eliminates the need for an input power limiter, which in turn significantly increases the overall noise figure. As a result LNA MMIC was developed with the following characteristics: noise figure less than 1.6 dB, small-signal gain more than 20 dB, return loss better than -13 dB and output power more than 19 dBm with 1 dB compression in the range from 7 to 12 GHz in dimensions 2x1.5 mm², which has a supply voltage of 8 V and a current consumption of less than 70 mA. However, it should be said that LNA was only modeled in the AWR DE.
Kotelnikov Institute of Radioengineering and Electronics of Russian Academy of Sciences
Title: GaN low-noise X-band MMIC amplifier.
Description:
The purpose of this paper is to design a microwave monolithic integrated circuit (MMIC) for low noise amplifier (LNA) X-band (7-12 GHz) based on technology of gallium nitride (GaN) high electron mobility transistor (HEMT) with a T-gate, which has 100 nm width, on a silicon (Si) semi-insulating substrate of the OMMIC company.
The amplifier is based on common-source transistors with series feedback, which was formed by high-impedance transmission line, and with parallel feedback to match noise figure and power gain.
The key characteristics of an LNA are noise figure and gain.
However, in this paper, it was decided to design the LNA, which should have a good margin in terms of input and output power.
As a result, GaN technology was chosen, which has a higher noise figure compared to other technologies, but eliminates the need for an input power limiter, which in turn significantly increases the overall noise figure.
As a result LNA MMIC was developed with the following characteristics: noise figure less than 1.
6 dB, small-signal gain more than 20 dB, return loss better than -13 dB and output power more than 19 dBm with 1 dB compression in the range from 7 to 12 GHz in dimensions 2x1.
5 mm², which has a supply voltage of 8 V and a current consumption of less than 70 mA.
However, it should be said that LNA was only modeled in the AWR DE.
Related Results
Highmobility AlGaN/GaN high electronic mobility transistors on GaN homo-substrates
Highmobility AlGaN/GaN high electronic mobility transistors on GaN homo-substrates
Gallium nitride (GaN) has great potential applications in high-power and high-frequency electrical devices due to its superior physical properties.High dislocation density of GaN g...
Studies on the Influences of i-GaN, n-GaN, p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors
Studies on the Influences of i-GaN, n-GaN, p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors
Systematic studies were performed on the influence of different cap layers of i-GaN, n-GaN, p-GaN and InGaN on AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on sapphi...
Environmental History of Oceanic Noise Pollution
Environmental History of Oceanic Noise Pollution
The concept of “ocean noise” precedes the concept of “ocean noise pollution” by about half a century. Those seeking a body of scholarly literature on ocean noise as an environmenta...
(Invited) Characterization of Metal/GaN Schottky Contacts - Review from the Early Days
(Invited) Characterization of Metal/GaN Schottky Contacts - Review from the Early Days
GaN-based materials have been intensively developed for blue light-emitting-diodes, blue laser diodes, power amplifiers in wireless base-stations, and high-power switching devices....
Thực trạng nhiễm HDV ở Bệnh viện Trung ương Quân đội 108
Thực trạng nhiễm HDV ở Bệnh viện Trung ương Quân đội 108
Mục tiêu: Phân tích tình trạng nhiễm vi rút viêm gan D, cũng như phân bố kiểu gen của vi rút viêm gan D trên những bệnh nhân nhiễm viêm gan B tại Bệnh viện Trung ương Quân đội 108....
CHẤT TƯƠNG PHẢN MRI - PRIMOVIST: VAI TRÒ TRONG CHẨN ĐOÁN THƯƠNG TỔN GAN
CHẤT TƯƠNG PHẢN MRI - PRIMOVIST: VAI TRÒ TRONG CHẨN ĐOÁN THƯƠNG TỔN GAN
TÓM TẮTMục đích: Đánh giá vai trò của chất tương phản MRI đặc hiệu cho tế bào gan: Primovist trong việc phát hiện u nhỏ ở gan và phân biệt giữa thương tổn lành tính và ác tính của ...
(Invited) Ion Implantation into GaN and Implanted GaN Power Transistors
(Invited) Ion Implantation into GaN and Implanted GaN Power Transistors
GaN is a promising material for high-power, high-frequency and high-efficiency electron devices owing to their high saturation electron velocity and large break-down electric field...
Spin-wave band gaps created by rotating square rods in triangular lattice magnonic crystals
Spin-wave band gaps created by rotating square rods in triangular lattice magnonic crystals
Recently, magnonic crystals which are the magnetic counterparts of photonic crystals or phononic crystals are becoming a hot area of research. In this paper, band structure of two-...