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Influence of Impurities on the Performance of Doped-Well GaInAs/InP Resonant Tunneling Diodes
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The influence of well impurity doping on the performance of GaInAs/InP resonant tunneling diodes (RTDs) was investigated. For undoped diodes, the peak-to-valley (P/V) current ratio was 9.7, at 2×1017 cm-3 it was 10.8, and at 2×1018 cm-3 it was 4.0. The maximum at 2×1017 cm-3 can be explained by potential bending, and the decrease at 2×1018 cm-3 can be explained by scattering. A change in the current-voltage characteristics at a doping level of 2×1018 cm-3 can be explained by potential bending in the well. Moreover, the variation in the observed width of the resonance level can explain the change in P/V ratios.
Title: Influence of Impurities on the Performance of Doped-Well GaInAs/InP Resonant Tunneling Diodes
Description:
The influence of well impurity doping on the performance of GaInAs/InP resonant tunneling diodes (RTDs) was investigated.
For undoped diodes, the peak-to-valley (P/V) current ratio was 9.
7, at 2×1017 cm-3 it was 10.
8, and at 2×1018 cm-3 it was 4.
The maximum at 2×1017 cm-3 can be explained by potential bending, and the decrease at 2×1018 cm-3 can be explained by scattering.
A change in the current-voltage characteristics at a doping level of 2×1018 cm-3 can be explained by potential bending in the well.
Moreover, the variation in the observed width of the resonance level can explain the change in P/V ratios.
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