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Influence of Substrate Orientation on Be Transport during Molecular Beam Epitaxy of AlGaAs/GaAs Heterojunction Bipolar Transistors
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The influence of substrate orientation on Be transport during GaAs molecular beam epitaxy is evaluated by secondary ion mass spectrometry and from the current-voltage characteristics of AlGaAs/GaAs heterojunction bipolar transistors (HBTs). The Be doping level employed is from 2×1019 cm-3 to 9×1019 cm-3. The Be transport for the conventional (100) orientation increases rapidly with the increase of growth temperature (T
s) from 530°C to 630°C. With substrate misorientation from (100) toward (111)A, however, Be transport is decreased at T
s=630°C, and reaches a minimum with (311)A orientation. The maximum current gain of AlGaAs/GaAs HBTs grown at T
s=560°C is 264 for (411)A orientation and 3 for (100) orientation, which confirms the applicability of substrate orientations other than the conventional (100) one for obtaining a sharp Be profile.
Title: Influence of Substrate Orientation on Be Transport during Molecular Beam Epitaxy of AlGaAs/GaAs Heterojunction Bipolar Transistors
Description:
The influence of substrate orientation on Be transport during GaAs molecular beam epitaxy is evaluated by secondary ion mass spectrometry and from the current-voltage characteristics of AlGaAs/GaAs heterojunction bipolar transistors (HBTs).
The Be doping level employed is from 2×1019 cm-3 to 9×1019 cm-3.
The Be transport for the conventional (100) orientation increases rapidly with the increase of growth temperature (T
s) from 530°C to 630°C.
With substrate misorientation from (100) toward (111)A, however, Be transport is decreased at T
s=630°C, and reaches a minimum with (311)A orientation.
The maximum current gain of AlGaAs/GaAs HBTs grown at T
s=560°C is 264 for (411)A orientation and 3 for (100) orientation, which confirms the applicability of substrate orientations other than the conventional (100) one for obtaining a sharp Be profile.
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