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GaAs/AlGaAs- and InGaAs/AlGaAs-heterostructures for high-power semiconductor infrared emitters
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The internal quantum efficiency of GaAs/AlGaAs- and InGaAs/AlGaAs-heterostructures for infrared light emitter diodes has been determined. The influence of the growth conditions of heterostructures grown by the molecular beam epitaxy and post-growth annealing on the quantum efficiency of heterostructures has been investigated. It has been shown that it is possible to increase the quantum luminescence efficiency of the studied heterostructures up to 75-80% at the average power by the combined optimization of these processes. Keywords: GaAs/AlGaAs and InGaAs/AlGaAs heterostructures, internal quantum exit, photoluminescence, molecular-beam epitaxy.
Ioffe Institute Russian Academy of Sciences
Title: GaAs/AlGaAs- and InGaAs/AlGaAs-heterostructures for high-power semiconductor infrared emitters
Description:
The internal quantum efficiency of GaAs/AlGaAs- and InGaAs/AlGaAs-heterostructures for infrared light emitter diodes has been determined.
The influence of the growth conditions of heterostructures grown by the molecular beam epitaxy and post-growth annealing on the quantum efficiency of heterostructures has been investigated.
It has been shown that it is possible to increase the quantum luminescence efficiency of the studied heterostructures up to 75-80% at the average power by the combined optimization of these processes.
Keywords: GaAs/AlGaAs and InGaAs/AlGaAs heterostructures, internal quantum exit, photoluminescence, molecular-beam epitaxy.
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