Search engine for discovering works of Art, research articles, and books related to Art and Culture
Javascript must be enabled to continue!
GaAs/AlGaAs- and InGaAs/AlGaAs-heterostructures for high-power semiconductor infrared emitters
View through CrossRef
The internal quantum efficiency of GaAs/AlGaAs- and InGaAs/AlGaAs-heterostructures for infrared light emitter diodes has been determined. The influence of the growth conditions of heterostructures grown by the molecular beam epitaxy and post-growth annealing on the quantum efficiency of heterostructures has been investigated. It has been shown that it is possible to increase the quantum luminescence efficiency of the studied heterostructures up to 75-80% at the average power by the combined optimization of these processes. Keywords: GaAs/AlGaAs and InGaAs/AlGaAs heterostructures, internal quantum exit, photoluminescence, molecular-beam epitaxy.
Ioffe Institute Russian Academy of Sciences
Title: GaAs/AlGaAs- and InGaAs/AlGaAs-heterostructures for high-power semiconductor infrared emitters
Description:
The internal quantum efficiency of GaAs/AlGaAs- and InGaAs/AlGaAs-heterostructures for infrared light emitter diodes has been determined.
The influence of the growth conditions of heterostructures grown by the molecular beam epitaxy and post-growth annealing on the quantum efficiency of heterostructures has been investigated.
It has been shown that it is possible to increase the quantum luminescence efficiency of the studied heterostructures up to 75-80% at the average power by the combined optimization of these processes.
Keywords: GaAs/AlGaAs and InGaAs/AlGaAs heterostructures, internal quantum exit, photoluminescence, molecular-beam epitaxy.
Related Results
Transport and optical properties of AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs heterostructures subjected to CH4/H2 reactive ion etching
Transport and optical properties of AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs heterostructures subjected to CH4/H2 reactive ion etching
We investigate the effect of methane/hydrogen (CH4/H2) reactive ion etching (RIE) and a subsequent annealing process on AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs heterostruc...
AlGaAs/GaAs and AlGaAs/InGaAs/GaAs High Electron Mobility Transistors Grown by Metalorganic Vapor Phase Epitaxy Using Tertiarybutylarsine
AlGaAs/GaAs and AlGaAs/InGaAs/GaAs High Electron Mobility Transistors Grown by Metalorganic Vapor Phase Epitaxy Using Tertiarybutylarsine
We demonstrate the first fabrication of AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistors (HEMTs) grown by metalorganic vapor phase epitaxy (MOVPE...
Simulation and comparision of GaAs, AlGaAs and GaInP barriers in InGaAs quantum well lasers
Simulation and comparision of GaAs, AlGaAs and GaInP barriers in InGaAs quantum well lasers
Abstract
InGaAs quantum wells with GaAs, AlGaAs and GaInP barriers have been simulated, respectively. The InGaAs/GaInP structure reveals a high material gain which c...
Atomic and electronic structures of silicene and germanene on GaAs(111)
Atomic and electronic structures of silicene and germanene on GaAs(111)
By using first-principles method in the density-functional theory, we clarify the atomic and electronic structures of silicene and germanene on 1×1 GaAs(111). We find stable struct...
Evolution process of cross-hatch patterns and reduction of surface roughness in (InAs)m(GaAs)n strained short-period superlattices and InGaAs alloy layers grown on GaAs
Evolution process of cross-hatch patterns and reduction of surface roughness in (InAs)m(GaAs)n strained short-period superlattices and InGaAs alloy layers grown on GaAs
We investigated the formation process of cross-hatch patterns (CHPs) and the lattice relaxation process in the growth of an (InAs)1(GaAs)4 strained short-period superlattice (SSPS)...
Desorption of Indium during the Growth of GaAs/InGaAs/GaAs Heterostructures by Molecular Beam Epitaxy
Desorption of Indium during the Growth of GaAs/InGaAs/GaAs Heterostructures by Molecular Beam Epitaxy
The desorption of indium during molecular beam epitaxy (MBE) growth of InGaAs and GaAs/InGaAs/GaAs quantum wells has been investigated by reflection high energy electron diffractio...
Electroreflectance bias-wavelength mapping of the modulation Si δ-doped pseudomorphic GaAs/InGaAs/AlGaAs structure
Electroreflectance bias-wavelength mapping of the modulation Si δ-doped pseudomorphic GaAs/InGaAs/AlGaAs structure
The electroreflectance bias-wavelength mapping is proposed as a tool for characterization of low-dimensional structures. The results of room-temperature measurements on modulation ...
Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
Surface morphologies of GaAs layers grown on (775)B-oriented GaAs substrates by molecular beam epitaxy were studied using atomic force microscopy. The surface of a GaAs layer gr...