Search engine for discovering works of Art, research articles, and books related to Art and Culture
Javascript must be enabled to continue!
Strategic Review on Different Materials for FinFET Structure Performance Optimization
View through CrossRef
Abstract
In this paper, the strategic review of different materials that are used in FinFET structure is studied. This is achieved by using carefully designed source/drain spacers and doped extensions to mitigate the off-current, typically high in narrow band-gap materials, as part of a CMOS compatible replacement-metal gate process flow. FinFETs are promising substitutes for bulk complementary metal oxide semiconductor. FinFETs are dual-gate devices and Good electrostatic characteristics which are obtained in a wide range of device dimensions. The simulations provide further insights into device functionality and about the dominant off-state leakage mechanisms. The GaAs material was examined by scanning transmission electron microscopy (STEM) and the epitaxial structures showed good crystal quality. In this various types of materials are used and studied they are FinFET based Dual KK-structure, InGaAs-on-Insulator FinFET, Double Gate based n-FinFET using Hafnium oxide, SOI-FinFETs, MosFET (Multi gate), Deeply Scaled CMOS, FinFET, Selective Epitaxial Si Growth in FinFET and Atomic Layer Deposition (ALD) in FinFET. Furthermore, we demonstrate a controlled GaAs digital etching process to create doped extensions below the source-drain spacer regions.
Title: Strategic Review on Different Materials for FinFET Structure Performance Optimization
Description:
Abstract
In this paper, the strategic review of different materials that are used in FinFET structure is studied.
This is achieved by using carefully designed source/drain spacers and doped extensions to mitigate the off-current, typically high in narrow band-gap materials, as part of a CMOS compatible replacement-metal gate process flow.
FinFETs are promising substitutes for bulk complementary metal oxide semiconductor.
FinFETs are dual-gate devices and Good electrostatic characteristics which are obtained in a wide range of device dimensions.
The simulations provide further insights into device functionality and about the dominant off-state leakage mechanisms.
The GaAs material was examined by scanning transmission electron microscopy (STEM) and the epitaxial structures showed good crystal quality.
In this various types of materials are used and studied they are FinFET based Dual KK-structure, InGaAs-on-Insulator FinFET, Double Gate based n-FinFET using Hafnium oxide, SOI-FinFETs, MosFET (Multi gate), Deeply Scaled CMOS, FinFET, Selective Epitaxial Si Growth in FinFET and Atomic Layer Deposition (ALD) in FinFET.
Furthermore, we demonstrate a controlled GaAs digital etching process to create doped extensions below the source-drain spacer regions.
Related Results
FinFET Devices and Integration
FinFET Devices and Integration
Through more than a decade of industry wide R&D effort, 3D-FinFET has found its way into manufacturing. In this abstract, we review the key progress in process and integration ...
Investigation on Geometrical Effects of FinFET Electronic Device Properties Using TCAD Simulations and Taguchi Optimization
Investigation on Geometrical Effects of FinFET Electronic Device Properties Using TCAD Simulations and Taguchi Optimization
Accurate determination of transistor size parameters is necessary to provide ideal operating conditions and performance. Using Design of Experiments (DoE) techniques to enhance dev...
Performance Evaluation of Datapath designs using FinFET and MOSFET
Performance Evaluation of Datapath designs using FinFET and MOSFET
The VLSI Technology has been progressing significantly and the circuits which consume less power become major concern factor for designing todays ICs for Microprocessors and other ...
Low Power and Energy‐Efficient Design of
MTJ
/
FinFET
Circuits
Low Power and Energy‐Efficient Design of
MTJ
/
FinFET
Circuits
ABSTRACT
As technological nodes are scaled down to the nanoscale, power consumption emerges as a critical challenge in complementary metal‐oxide‐semiconductor (CM...
Design and Analysis of Low Power FINFET SRAM with Leakage Current Reduction Techniques
Design and Analysis of Low Power FINFET SRAM with Leakage Current Reduction Techniques
Abstract
This article provides the development and examination of low-power FINFET SRAM with leakage current reduction techniques. The CMOS properties do not hold up well a...
Evaluating the Science to Inform the Physical Activity Guidelines for Americans Midcourse Report
Evaluating the Science to Inform the Physical Activity Guidelines for Americans Midcourse Report
Abstract
The Physical Activity Guidelines for Americans (Guidelines) advises older adults to be as active as possible. Yet, despite the well documented benefits of physical activi...
Reliability and Power Analysis of FinFET Based SRAM
Reliability and Power Analysis of FinFET Based SRAM
Abstract
Demand for accommodating more and new functionalities within a single chip such as SOC needs a novel devices and architecture such as FinFET device instead of MOSF...
Transistor-Optimized FinFet Full Adder for Low-Power and High-Speed VLSI
Transistor-Optimized FinFet Full Adder for Low-Power and High-Speed VLSI
With the aggressive scaling of semiconductor technologies, the design of low-power and high-speed arithmetic circuits has become a critical challenge in Very Large-Scale Integratio...