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Effect of Si doping in AlAs barrier layers of AlAs-GaAs-AlAs double-barrier resonant tunneling diodes
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AlAs-GaAs-AlAs double-barrier resonant tunneling diodes (DBRTDs) with different doping levels in the AlAs layers have been investigated. Two-step spacer layers were used in all samples. Peak-to-valley current ratios (PVCRs) as high as 3.5 (11.3), 3.5 (11.3), and 2.7 (8.2) were observed at 300 K (77 K) for samples with undoped, 1.2×1017 cm−3, and 3×1018 cm−3 doped AlAs barriers, respectively. These results indicate that resonant tunneling is not strongly affected by ionized Si atoms in the AlAs barriers. The excellent PVCRs observed in DBRTDs with two-step spacer layers is not because of low background impurity densities in the active region, but because of a third barrier formed by band bending in the spacer layers.
Title: Effect of Si doping in AlAs barrier layers of AlAs-GaAs-AlAs double-barrier resonant tunneling diodes
Description:
AlAs-GaAs-AlAs double-barrier resonant tunneling diodes (DBRTDs) with different doping levels in the AlAs layers have been investigated.
Two-step spacer layers were used in all samples.
Peak-to-valley current ratios (PVCRs) as high as 3.
5 (11.
3), 3.
5 (11.
3), and 2.
7 (8.
2) were observed at 300 K (77 K) for samples with undoped, 1.
2×1017 cm−3, and 3×1018 cm−3 doped AlAs barriers, respectively.
These results indicate that resonant tunneling is not strongly affected by ionized Si atoms in the AlAs barriers.
The excellent PVCRs observed in DBRTDs with two-step spacer layers is not because of low background impurity densities in the active region, but because of a third barrier formed by band bending in the spacer layers.
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