Search engine for discovering works of Art, research articles, and books related to Art and Culture
Javascript must be enabled to continue!
High-Density GaAs/AlAs Quantum Wires Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
View through CrossRef
GaAs/AlAs quantum wires (QWRs) were found to be naturally formed by a regularly corrugated AlAs/GaAs interface and a flat GaAs/AlAs interface in an AlAs/GaAs/AlAs quantum well with a well width of 3.3 nm grown on a (775)B GaAs substrate by molecular beam epitaxy. The lateral period and vertical amplitude of the AlAs/GaAs interface corrugation were 12 nm and 1.2 nm, respectively. The QWRs were formed side by side with an extremely high density of 8×105 QWRs/cm. A photoluminescence peak at λ=715 nm from the QWRs with a cross section of about 12×3 nm2 showed a polarization degree of (I
∥ - I
⊥) / (I
∥ + I
⊥) = 0.11 and a very small full width at half maximum of 15 meV at 4.2 K.
IOP Publishing
Title: High-Density GaAs/AlAs Quantum Wires Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
Description:
GaAs/AlAs quantum wires (QWRs) were found to be naturally formed by a regularly corrugated AlAs/GaAs interface and a flat GaAs/AlAs interface in an AlAs/GaAs/AlAs quantum well with a well width of 3.
3 nm grown on a (775)B GaAs substrate by molecular beam epitaxy.
The lateral period and vertical amplitude of the AlAs/GaAs interface corrugation were 12 nm and 1.
2 nm, respectively.
The QWRs were formed side by side with an extremely high density of 8×105 QWRs/cm.
A photoluminescence peak at λ=715 nm from the QWRs with a cross section of about 12×3 nm2 showed a polarization degree of (I
∥ - I
⊥) / (I
∥ + I
⊥) = 0.
11 and a very small full width at half maximum of 15 meV at 4.
2 K.
Related Results
Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
Surface morphologies of GaAs layers grown on (775)B-oriented GaAs substrates by molecular beam epitaxy were studied using atomic force microscopy. The surface of a GaAs layer gr...
Mistisisme Sastra Lisan: Kearifan Lingkungan dalam Tradisi Cepetan Alas
Mistisisme Sastra Lisan: Kearifan Lingkungan dalam Tradisi Cepetan Alas
Abstrak
Penelitian ini mengkaji tradisi kebudayaan sebagai aktivitas dan proses berpikir, bertindak dan bersikap secara arif dan bijaksana dalam mengamati, memanfaatkan dan m...
Misorientation Dependence of Crystal Structures and Electrical Properties of Si-Doped AlAs Grown on (111)A GaAs by Molecular Beam Epitaxy
Misorientation Dependence of Crystal Structures and Electrical Properties of Si-Doped AlAs Grown on (111)A GaAs by Molecular Beam Epitaxy
Si-doped AlAs layers are grown on (111)A GaAs by molecular beam epitaxy (MBE). The crystal phase is found to change from hexagonal (H) to cubic (C) and the resistivity of AlAs laye...
Highly Uniform GaAs/AlAs Quantum Wires Grown on [001] Ridges of GaAs(100) Patterned Substrates by Molecular Beam Epitaxy
Highly Uniform GaAs/AlAs Quantum Wires Grown on [001] Ridges of GaAs(100) Patterned Substrates by Molecular Beam Epitaxy
Highly uniform GaAs/AlAs ridge quantum well (QW) structures have been grown on ridges with various widths of about 0.1–1.3 µ m in the [001] direction on GaAs (100) patterned substr...
Optical and structural characterization of ZnSe films grown by molecular beam epitaxy on GaAs substrates with and without GaAs buffer layers
Optical and structural characterization of ZnSe films grown by molecular beam epitaxy on GaAs substrates with and without GaAs buffer layers
ZnSe films with thickness between 800 and 7500 Å were grown on GaAs(100) by molecular beam epitaxy (MBE), and characterized by photoluminescence (PL), photoreflectance (PR), transm...
Advanced frameworks for fraud detection leveraging quantum machine learning and data science in fintech ecosystems
Advanced frameworks for fraud detection leveraging quantum machine learning and data science in fintech ecosystems
The rapid expansion of the fintech sector has brought with it an increasing demand for robust and sophisticated fraud detection systems capable of managing large volumes of financi...
GaAs Quantum-Wire Laser Using Fractional Layer Superlattice
GaAs Quantum-Wire Laser Using Fractional Layer Superlattice
In (AlAs)
k/n
(GaAs)
l/n
(k+l=n) fractional layer superlattice (FLS) growth on the (001) GaAs vicinal...
PENGEMBANGAN DESTINASI WISATA KLENIK TAMAN NASIONAL ALAS PURWO DI KABUPATEN BANYUWANGI
PENGEMBANGAN DESTINASI WISATA KLENIK TAMAN NASIONAL ALAS PURWO DI KABUPATEN BANYUWANGI
The Klenik Tourism of the Alas Purwo National Park is visited by many groups of people especially shamans who come to the Alas Purwo National Park from various regions and various ...