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Misorientation Dependence of Crystal Structures and Electrical Properties of Si-Doped AlAs Grown on (111)A GaAs by Molecular Beam Epitaxy
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Si-doped AlAs layers are grown on (111)A GaAs by molecular beam epitaxy (MBE). The crystal phase is found to change from hexagonal (H) to cubic (C) and the resistivity of AlAs layers is shown to be strongly dependent on the misorientation from exactly oriented (111)A GaAs. It is confirmed that hexagonal AlAs can only be grown on exactly oriented (111)A GaAs and that zincblende AlAs can be grown on misoriented (111)A GaAs, using X-ray diffraction and Raman scattering measurements, respectively. The lattice constants of hexagonal AlAs are determined to be a=4.034 Å and c=6.568 Å. Si-doped AlAs with a zincblende structure shows n-type conductivity and low resistivity, but Si-doped AlAs with a hexagonal structure exhibits high resistivity (>105 Ω·cm). The crystal qualities and electrical properties of Si-doped AlAs on 5°-misoriented (111)A GaAs are equivalent to those of Si-doped AlAs on (100) GaAs.
Title: Misorientation Dependence of Crystal Structures and Electrical Properties of Si-Doped AlAs Grown on (111)A GaAs by Molecular Beam Epitaxy
Description:
Si-doped AlAs layers are grown on (111)A GaAs by molecular beam epitaxy (MBE).
The crystal phase is found to change from hexagonal (H) to cubic (C) and the resistivity of AlAs layers is shown to be strongly dependent on the misorientation from exactly oriented (111)A GaAs.
It is confirmed that hexagonal AlAs can only be grown on exactly oriented (111)A GaAs and that zincblende AlAs can be grown on misoriented (111)A GaAs, using X-ray diffraction and Raman scattering measurements, respectively.
The lattice constants of hexagonal AlAs are determined to be a=4.
034 Å and c=6.
568 Å.
Si-doped AlAs with a zincblende structure shows n-type conductivity and low resistivity, but Si-doped AlAs with a hexagonal structure exhibits high resistivity (>105 Ω·cm).
The crystal qualities and electrical properties of Si-doped AlAs on 5°-misoriented (111)A GaAs are equivalent to those of Si-doped AlAs on (100) GaAs.
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