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Resonant interband tunneling in InAs/GaSb/AlSb/InAs and GaSb/InAs/AlSb/GaSb heterostructures
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Tunneling in InAs/GaSb/AlSb/InAs and GaSb/InAs/AlSb/GaSb structures has been observed for the first time and shown to offer large peak-to-valley ratios at higher peak current densities than previous double-barrier and single-barrier polytype interband tunneling results. Room-temperature peak-to-valley ratios as high as 20:1 were observed at peak current densities of 28 kA/cm2. The highest peak-to-valley ratio observed at 80 K was 80:1 at 1.2 kA/cm2. The large peak-to-valley ratios are attributed to resonant interband tunneling with a confined state and band-gap blocking of nonresonant currents. The operation of these devices is similar to asymmetric double-barrier structures.
Title: Resonant interband tunneling in InAs/GaSb/AlSb/InAs and GaSb/InAs/AlSb/GaSb heterostructures
Description:
Tunneling in InAs/GaSb/AlSb/InAs and GaSb/InAs/AlSb/GaSb structures has been observed for the first time and shown to offer large peak-to-valley ratios at higher peak current densities than previous double-barrier and single-barrier polytype interband tunneling results.
Room-temperature peak-to-valley ratios as high as 20:1 were observed at peak current densities of 28 kA/cm2.
The highest peak-to-valley ratio observed at 80 K was 80:1 at 1.
2 kA/cm2.
The large peak-to-valley ratios are attributed to resonant interband tunneling with a confined state and band-gap blocking of nonresonant currents.
The operation of these devices is similar to asymmetric double-barrier structures.
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