Investigation of interfaces in AlSb/InAs/Ga0.71In0.29Sb quantum wells by photoluminescence

We have investigated excitation power and temperature dependent PL spectra to systematically study the influences of the interfaces in the both InAs/Ga0.71In0.29Sb and InAs/AlSb on the optical properties of AlSb/Ga0.71In0.29Sb/InAs quantum wells (QWs). The localized states as well as the activation energy were analyzed to discuss the possible thermal quenching and non-radiative recombination mechanisms. We found two non-radiative recombination processes were involved in the thermal quenching of radiative emission for the QW structures. The GaAs-like interface in InAs/Ga0.71In0.29Sb with higher activation energy (62.7 meV) in high temperature region (70 K–300 K) supplies a deeper hole confinement and less roughness than the InSb-like one, which suppress non-radiative recombination process and promote the optical qualities of the quantum wells. The peak energy of the InSb-like sample exhibited “step-curve” behavior with increase temperature. Neither InSb-like nor AlAs-like interface in InAs/AlSb favored the radiative emission efficiency.