Search engine for discovering works of Art, research articles, and books related to Art and Culture
Javascript must be enabled to continue!
Resonant interband coupling in single-barrier heterostructures of InAs/GaSb/InAs and GaSb/InAs/GaSb
View through CrossRef
A new mechanism for negative differential resistance due to electron/light hole coupling has been observed using broken gap heterostructures of InAs/GaSb/InAs and GaSb/InAs/GaSb. The best peak-to-valley ratio is about 2:1 (3.7:1 at 77 K) for a GaSb layer width of 10 nm. The peak current density of 4.2 kA cm−2 and the peak voltage of 300 mV are consistent with the interpretation of these experiments as interband coupling between the InAs conduction band and the GaSb valence (light hole) band.
Title: Resonant interband coupling in single-barrier heterostructures of InAs/GaSb/InAs and GaSb/InAs/GaSb
Description:
A new mechanism for negative differential resistance due to electron/light hole coupling has been observed using broken gap heterostructures of InAs/GaSb/InAs and GaSb/InAs/GaSb.
The best peak-to-valley ratio is about 2:1 (3.
7:1 at 77 K) for a GaSb layer width of 10 nm.
The peak current density of 4.
2 kA cm−2 and the peak voltage of 300 mV are consistent with the interpretation of these experiments as interband coupling between the InAs conduction band and the GaSb valence (light hole) band.
Related Results
The effect of the InAs layer thickness on the peak current density and subband properties of the GaSb/InAs/GaSb/AlSb/InAs structures
The effect of the InAs layer thickness on the peak current density and subband properties of the GaSb/InAs/GaSb/AlSb/InAs structures
The incorporation of the InAs layer as the blocking layer into the GaSb side of the GaSb/AlSb/InAs single-barrier interband tunneling structure resulting in a GaSb/InAs/GaSb/AlSb/I...
The effects of GaSb/InAs broken gap on interband tunneling current of a GaSb/InAs/GaSb/AlSb/InAs tunneling structure
The effects of GaSb/InAs broken gap on interband tunneling current of a GaSb/InAs/GaSb/AlSb/InAs tunneling structure
We propose and study a new GaSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling diode by varying the thicknesses of the InAs layer. A twice-higher peak current density and a thr...
Resonant interband tunneling in InAs/GaSb/AlSb/InAs and GaSb/InAs/AlSb/GaSb heterostructures
Resonant interband tunneling in InAs/GaSb/AlSb/InAs and GaSb/InAs/AlSb/GaSb heterostructures
Tunneling in InAs/GaSb/AlSb/InAs and GaSb/InAs/AlSb/GaSb structures has been observed for the first time and shown to offer large peak-to-valley ratios at higher peak current densi...
Electronic structure of piezoelectric double-barrier InAs/InP/InAs/InP/InAs (111) nanowires
Electronic structure of piezoelectric double-barrier InAs/InP/InAs/InP/InAs (111) nanowires
We present a theoretical study of an n-type InAs nanowire with built-in InAs/InP heterojunctions in the effective-mass approximation via self-consistent Poisson–Schrödinger calcula...
Novel Nanofabrication Process for InAs/AlGaSb Heterostructures Utilizing Atomic Force Microscope Oxidation
Novel Nanofabrication Process for InAs/AlGaSb Heterostructures Utilizing Atomic Force Microscope Oxidation
We demonstrate a novel nanofabrication process for InAs which is shown to be readily applicable to the fabrication of InAs-based nanostructure devices that employ quantum dot or wi...
Inter-band Transition in Citrate Capped Marks Dodecahedral Colloidal Gold Nanoparticles
Inter-band Transition in Citrate Capped Marks Dodecahedral Colloidal Gold Nanoparticles
Background:
Optical properties of citrate capped dodecahedral gold nanoparticles have
immense applications in a large variety of fields. The interband transition has a role in dete...
Tailoring plasmons in van der Waals nano-materials by design
Tailoring plasmons in van der Waals nano-materials by design
Plasmonics in two-dimensional (2D) materials and their van der Waals (vdW) heterostructures, as a key component of modern nanophotonics, have significant advancements with the adve...
Nouvelles sources lasers à super réseau InAs/GaSb/InSb pour l'émission moyen infrarouge
Nouvelles sources lasers à super réseau InAs/GaSb/InSb pour l'émission moyen infrarouge
Ce travail de thèse porte sur le développement et l'étude de diodes laser moyen infrarouge dont la zone active est constituée d'un super réseau (SR) à très courte période InAs/GaSb...