Performance Analysis of Dual Metal Nitride Oxide GAAFET based Common Source Amplifier

Abstract Gate all around FET (GAAFET) is a widely used device structure for designing analog and digital circuits. In this research paper, a common source amplifier is designed using a dual-metal nitride oxide gate all around FET (DM-NO GAAFET), and performance is investigated for gain, bandwidth, leakage power, and average power. Moreover, analytical expressions of potential, threshold voltage, and DIBL have also been given for DM-NO GAAFET. The DM-NO GAAFET based common source (CS) amplifier is compared with the MOSFET based CS amplifier to analyse the performance. First, RF performance parameters of total gate capacitance, unity gain frequency, and transit time are investigated for DM-NO GAAFET; consequently, look up table based Verilog A model is used to design CS amplifier. Since DM-NO GAAFET provides the very small value of miller capacitance which increases the maximum unity gain frequency of 2.340 THz at the gate voltage of 0.7V. The voltage gain of 2.51 at the frequency range of 10Hz to 50GHz for DM-NO GAAFET based CS amplifier, is observed which is 40.23 % higher as compared to MOSFET based CS amplifier. Furthermore, the higher bandwidth of 20GHz is also exhibited by DM-NO GAAFET based CS amplifier, which is advantageous for higher frequency applications. The leakage power and average power are reduced by 46.07% and 80.05%, respectively, for DM-NO GAAFET based CS amplifier, which makes it very much suitable for low power and higher frequency analog integrated circuits.