Search engine for discovering works of Art, research articles, and books related to Art and Culture
Javascript must be enabled to continue!
Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
View through CrossRef
We report stacked InAs self-assembled quantum dot (QD) structures separated by GaAs interval layers grown by molecular beam epitaxy on a (001) GaAs substrate. The InAs QDs were vertically aligned up to the 9th layer. Strain in the interval layer induced by the lower QD strongly influences the upper QD alignment. A large defect due to lateral In segregation was observed with multiple stacked InAs self-assembled QD structures, which suppresses further vertical alignment of QDs in the upper region and decreases photoluminescence intensity drastically. Optical memory effect of InAs QDs buried in Schottky barrier diode was observed with memory retention time of 0.48 ms for the first time.
Title: Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
Description:
We report stacked InAs self-assembled quantum dot (QD) structures separated by GaAs interval layers grown by molecular beam epitaxy on a (001) GaAs substrate.
The InAs QDs were vertically aligned up to the 9th layer.
Strain in the interval layer induced by the lower QD strongly influences the upper QD alignment.
A large defect due to lateral In segregation was observed with multiple stacked InAs self-assembled QD structures, which suppresses further vertical alignment of QDs in the upper region and decreases photoluminescence intensity drastically.
Optical memory effect of InAs QDs buried in Schottky barrier diode was observed with memory retention time of 0.
48 ms for the first time.
Related Results
Increase of Critical Thickness and Optical Emission Range in (InAs)1(GaAs)n Strained Short-Period Superlattices
Increase of Critical Thickness and Optical Emission Range in (InAs)1(GaAs)n Strained Short-Period Superlattices
The critical thickness and optical emission wavelength range of (InAs)1(GaAs)
n
strained sho...
Ellipsometric Study of Self-Assembled InAs/GaAs Quantum Dots
Ellipsometric Study of Self-Assembled InAs/GaAs Quantum Dots
We measured the pseudo-dielectric function
of self-assembled InAs/GaAs quantum dots at
room temperature using spectroscopic ellipsometry.
We observed a strong excitonic pe...
Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
Surface morphologies of GaAs layers grown on (775)B-oriented GaAs substrates by molecular beam epitaxy were studied using atomic force microscopy. The surface of a GaAs layer gr...
Advanced frameworks for fraud detection leveraging quantum machine learning and data science in fintech ecosystems
Advanced frameworks for fraud detection leveraging quantum machine learning and data science in fintech ecosystems
The rapid expansion of the fintech sector has brought with it an increasing demand for robust and sophisticated fraud detection systems capable of managing large volumes of financi...
GaAs/Ge/GaAs Sublattice Reversal Epitaxy on GaAs (100) and (111) Substrates for Nonlinear Optical Devices
GaAs/Ge/GaAs Sublattice Reversal Epitaxy on GaAs (100) and (111) Substrates for Nonlinear Optical Devices
Sublattice reversal epitaxy is demonstrated in lattice-matched
GaAs/Ge/GaAs (100) and (111) systems using molecular beam epitaxy, and confirmed
by reflection high energy elec...
Advancements in Quantum Computing and Information Science
Advancements in Quantum Computing and Information Science
Abstract: The chapter "Advancements in Quantum Computing and Information Science" explores the fundamental principles, historical development, and modern applications of quantum co...
Highly Uniform GaAs/AlAs Quantum Wires Grown on [001] Ridges of GaAs(100) Patterned Substrates by Molecular Beam Epitaxy
Highly Uniform GaAs/AlAs Quantum Wires Grown on [001] Ridges of GaAs(100) Patterned Substrates by Molecular Beam Epitaxy
Highly uniform GaAs/AlAs ridge quantum well (QW) structures have been grown on ridges with various widths of about 0.1–1.3 µ m in the [001] direction on GaAs (100) patterned substr...
Integrating quantum neural networks with machine learning algorithms for optimizing healthcare diagnostics and treatment outcomes
Integrating quantum neural networks with machine learning algorithms for optimizing healthcare diagnostics and treatment outcomes
The rapid advancements in artificial intelligence (AI) and quantum computing have catalyzed an unprecedented shift in the methodologies utilized for healthcare diagnostics and trea...