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Oxidation Saturation of SiGe Alloy on Silicon-on-Insulator Wafers
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Oxidation saturation of SiGe alloy on silicon-on-insulator wafers was investigated. Oxidation saturates after a few hours for the Si1-xGex (x=0.068-0.156) layers. For higher initial Ge concentrations of the SiGe layer, the oxidation saturated in a shorter oxidation time. We propose a model for oxidation saturation, in which the oxidation saturation is governed by an interfacial melting layer that has high Ge concentration.
The Electrochemical Society
Title: Oxidation Saturation of SiGe Alloy on Silicon-on-Insulator Wafers
Description:
Oxidation saturation of SiGe alloy on silicon-on-insulator wafers was investigated.
Oxidation saturates after a few hours for the Si1-xGex (x=0.
068-0.
156) layers.
For higher initial Ge concentrations of the SiGe layer, the oxidation saturated in a shorter oxidation time.
We propose a model for oxidation saturation, in which the oxidation saturation is governed by an interfacial melting layer that has high Ge concentration.
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