Search engine for discovering works of Art, research articles, and books related to Art and Culture
Javascript must be enabled to continue!
Heteroepitaxy of Layered Semiconductor GaSe on a GaAs(111)B Surface
View through CrossRef
Growth of a III-VI compound semiconductor GaSe on a GaAs(111)B substrate has been tried by the molecular beam epitaxy technique. Although GaSe and GaAs have completely different lattice structures, it has been found that a good GaSe film having its own lattice constant grows with its c-axis normal to the GaAs substrate surface. The growth proceeds via van der Waals-like weak forces between each layer of GaSe, relaxing the lattice-matching condition drastically. The heteroepitaxial growth of GaSe will be applied to effective surface passivation of GaAs.
Title: Heteroepitaxy of Layered Semiconductor GaSe on a GaAs(111)B Surface
Description:
Growth of a III-VI compound semiconductor GaSe on a GaAs(111)B substrate has been tried by the molecular beam epitaxy technique.
Although GaSe and GaAs have completely different lattice structures, it has been found that a good GaSe film having its own lattice constant grows with its c-axis normal to the GaAs substrate surface.
The growth proceeds via van der Waals-like weak forces between each layer of GaSe, relaxing the lattice-matching condition drastically.
The heteroepitaxial growth of GaSe will be applied to effective surface passivation of GaAs.
Related Results
Growth and Characterization of GaAs/GaSe/Si Heterostructures
Growth and Characterization of GaAs/GaSe/Si Heterostructures
We have grown and characterized epitaxial GaAs grown on layered structure GaSe on As-passivated Si(111) for the purpose of using layered structure GaSe as a lattice mismatch/therma...
Modification of spin electronic properties of Fen/GaSe monolayer adsorption system
Modification of spin electronic properties of Fen/GaSe monolayer adsorption system
Group-ⅢA metal-monochalcogenides have been extensively studied due to their unique optoelectronic and spin electronic properties. To realize the device applications, modifying thei...
Tri-layered van der Waals heterostructures based on graphene, gallium selenide and molybdenum selenide
Tri-layered van der Waals heterostructures based on graphene, gallium selenide and molybdenum selenide
In this work, we propose ultrathin trilayered heterostructures (TL-HTSs) of graphene (G), gallium selenide (GaSe), and molybdenum selenide (MoSe2) monolayers and investigate their ...
Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
Surface morphologies of GaAs layers grown on (775)B-oriented GaAs substrates by molecular beam epitaxy were studied using atomic force microscopy. The surface of a GaAs layer gr...
High-Quality GaSe Single Crystal Grown by the Bridgman Method
High-Quality GaSe Single Crystal Grown by the Bridgman Method
A high-quality GaSe single crystal was grown by the Bridgman method. The X-ray rocking curve for the studied GaSe sample is symmetric and the Full Width at Half Maximum (FWHM) is o...
GaAs/Ge/GaAs Sublattice Reversal Epitaxy on GaAs (100) and (111) Substrates for Nonlinear Optical Devices
GaAs/Ge/GaAs Sublattice Reversal Epitaxy on GaAs (100) and (111) Substrates for Nonlinear Optical Devices
Sublattice reversal epitaxy is demonstrated in lattice-matched
GaAs/Ge/GaAs (100) and (111) systems using molecular beam epitaxy, and confirmed
by reflection high energy elec...
Heteroepitaxial Growth of Layered Semiconductor GaSe on a Hydrogen-Terminated Si(111) Surface*
Heteroepitaxial Growth of Layered Semiconductor GaSe on a Hydrogen-Terminated Si(111) Surface*
Layered III-VI semiconductor GaSe has been heteroepitaxially grown on HF-treated Si(111) surfaces. The HF-treated Si surface is chemically inactive because of the hydrogen terminat...
Fabrication of GaAs Quantum Dots on a Bilayer-GaSe Terminated Si(111) Substrate
Fabrication of GaAs Quantum Dots on a Bilayer-GaSe Terminated Si(111) Substrate
We have developed a novel method to fabricate self-assembled quantum dots (QDs) of compound semiconductors on a Si(111) substrate using the so-called `droplet epitaxy' technique. I...