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Diffusion of Gallium Vacancies from Low-Temperature-Grown GaAs
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Diffusion of crystalline defects from low-temperature-grown GaAs (LT-GaAs) during annealing at 600°C has been studied. Gallium vacancies diffuse from the LT-GaAs layer into an adjacent Si doped GaAs layer, degrading the electrical characteristics of the Si-doped GaAs. An Al
x
Ga1-x
As (x>0.3) barrier inserted between the LT-GaAs and the Si-doped GaAs effectively suppresses the diffusion of gallium vacancies from the LT-GaAs.
Title: Diffusion of Gallium Vacancies from Low-Temperature-Grown GaAs
Description:
Diffusion of crystalline defects from low-temperature-grown GaAs (LT-GaAs) during annealing at 600°C has been studied.
Gallium vacancies diffuse from the LT-GaAs layer into an adjacent Si doped GaAs layer, degrading the electrical characteristics of the Si-doped GaAs.
An Al
x
Ga1-x
As (x>0.
3) barrier inserted between the LT-GaAs and the Si-doped GaAs effectively suppresses the diffusion of gallium vacancies from the LT-GaAs.
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