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GaAs/AlAs and AlAs/GaAs Interface Formation Process Studied by Coaxial Impact-Collision Ion Scattering Spectroscopy: Comparison between Alternating and Simultaneous Source Supply
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Real time observation of GaAs/AlAs and AlAs/GaAs heterointerface formation by molecular beam epitaxy with an alternating source supply and a conventional simultaneous source supply has been performed using coaxial impact-collision ion scattering spectroscopy. A He+ ion beam of 2 keV was incident on the sample surface and the scattering intensity from Ga and As atoms was measured in situ while Ga (Al) and As4 beams were alternately or simultaneously irradiated on the AlAs (GaAs) surface. The time-resolved variations in the scattering intensity show the behavior of Ga atoms in relation to droplet formation and surface segregation when growth is carried out by an alternating source supply, while the intensity variations are consistent with a simple layer-by-layer growth process in the case of simultaneous source supply.
Title: GaAs/AlAs and AlAs/GaAs Interface Formation Process Studied by Coaxial Impact-Collision Ion Scattering Spectroscopy: Comparison between Alternating and Simultaneous Source Supply
Description:
Real time observation of GaAs/AlAs and AlAs/GaAs heterointerface formation by molecular beam epitaxy with an alternating source supply and a conventional simultaneous source supply has been performed using coaxial impact-collision ion scattering spectroscopy.
A He+ ion beam of 2 keV was incident on the sample surface and the scattering intensity from Ga and As atoms was measured in situ while Ga (Al) and As4 beams were alternately or simultaneously irradiated on the AlAs (GaAs) surface.
The time-resolved variations in the scattering intensity show the behavior of Ga atoms in relation to droplet formation and surface segregation when growth is carried out by an alternating source supply, while the intensity variations are consistent with a simple layer-by-layer growth process in the case of simultaneous source supply.
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