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Electrical and Metallurgical Characteristics of PtSix and TiSix/GaAs Schottky Contacts
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ABSTRACTElectrical properties, metallurgical properties and their relationship of PtSix/GaAs formed by sputter deposition and TiSix/GaAs formed by e-gun multilayer evaporation have been studied. It has been found that TiSix/GaAs contacts exhibit excellent Schottky electrical propcrties and good metallurgical stability after RTA (975°C , 12 sec) but some interface unstability and degradation of electrical properties after conventional FA (800°C ,20 min). The electrical and metallurgical properties of PtSix/GaAs contacts begin to degrate after annealed at 500°C.
Title: Electrical and Metallurgical Characteristics of PtSix and TiSix/GaAs Schottky Contacts
Description:
ABSTRACTElectrical properties, metallurgical properties and their relationship of PtSix/GaAs formed by sputter deposition and TiSix/GaAs formed by e-gun multilayer evaporation have been studied.
It has been found that TiSix/GaAs contacts exhibit excellent Schottky electrical propcrties and good metallurgical stability after RTA (975°C , 12 sec) but some interface unstability and degradation of electrical properties after conventional FA (800°C ,20 min).
The electrical and metallurgical properties of PtSix/GaAs contacts begin to degrate after annealed at 500°C.
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