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Effect of Nitridation on 1/f Noise in n-MOSFETs with High-k Dielectric
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This paper reports the nitridation effects on 1/f noise in n- MOSFETs with MOCVD HfO2 as gate dielectric. Nitridation was carried out by using a post-deposition anneal (PDA) process in a N2 or NH3 ambient.For non-nitrided interfaces, significant variation in noise was observed for different PDAs. Devices annealed with N2 show the lowest input referred noise, close to ITRS specifications when compared to O2 and NH3 anneals. Decoupled plasma nitridation (DPN) was employed for devices involving nitrided interfaces.A suppressed effect was observed as the input-referred noise was found to have similar values for different conditions.A significant change in trap profile is noticed between nitrided and non-nitrided interfaces, which may be one of the causes for the differences observed. Trap densities, showed lowest values for a N2 PDA anneal and highest for an O2 anneal. Devices with nitrided interfaces show similar value for all PDAs in-between the N2 and O2 non-nitrided PDA.
The Electrochemical Society
Title: Effect of Nitridation on 1/f Noise in n-MOSFETs with High-k Dielectric
Description:
This paper reports the nitridation effects on 1/f noise in n- MOSFETs with MOCVD HfO2 as gate dielectric.
Nitridation was carried out by using a post-deposition anneal (PDA) process in a N2 or NH3 ambient.
For non-nitrided interfaces, significant variation in noise was observed for different PDAs.
Devices annealed with N2 show the lowest input referred noise, close to ITRS specifications when compared to O2 and NH3 anneals.
Decoupled plasma nitridation (DPN) was employed for devices involving nitrided interfaces.
A suppressed effect was observed as the input-referred noise was found to have similar values for different conditions.
A significant change in trap profile is noticed between nitrided and non-nitrided interfaces, which may be one of the causes for the differences observed.
Trap densities, showed lowest values for a N2 PDA anneal and highest for an O2 anneal.
Devices with nitrided interfaces show similar value for all PDAs in-between the N2 and O2 non-nitrided PDA.
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