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(Invited) From MRTA to SMRTA: Improvements in Activating Implanted Dopants in GaN
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The implantation and activation of dopants in GaN is a key enabling step for future devices requiring selective area doping. High temperatures (over 1300 ˚C) are required to activate p-type dopants in GaN. These high temperatures are above the decomposition temperature of GaN, which necessitates advanced annealing processes. One such process, the multicycle rapid thermal annealing (MRTA) process, has enabled the implantation and activation of p-type dopants in GaN. In this research, we demonstrate the symmetrical multicycle rapid thermal annealing (SMRTA) annealing process. The SMRTA annealing process includes an extra conventional annealing step after the rapid heating and cooling cycles and is shown to improve the crystalline structure of annealed GaN compared to the MRTA process.
The Electrochemical Society
Title: (Invited) From MRTA to SMRTA: Improvements in Activating Implanted Dopants in GaN
Description:
The implantation and activation of dopants in GaN is a key enabling step for future devices requiring selective area doping.
High temperatures (over 1300 ˚C) are required to activate p-type dopants in GaN.
These high temperatures are above the decomposition temperature of GaN, which necessitates advanced annealing processes.
One such process, the multicycle rapid thermal annealing (MRTA) process, has enabled the implantation and activation of p-type dopants in GaN.
In this research, we demonstrate the symmetrical multicycle rapid thermal annealing (SMRTA) annealing process.
The SMRTA annealing process includes an extra conventional annealing step after the rapid heating and cooling cycles and is shown to improve the crystalline structure of annealed GaN compared to the MRTA process.
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