Search engine for discovering works of Art, research articles, and books related to Art and Culture
Javascript must be enabled to continue!
(Invited) From MRTA to SMRTA: Improvements in Activating Implanted Dopants in GaN
View through CrossRef
The implantation and activation of dopants in GaN is a key enabling step for future devices requiring selective area doping. High temperatures (over 1300 ˚C) are required to activate p-type dopants in GaN. These high temperatures are above the decomposition temperature of GaN, which necessitates advanced annealing processes. One such process, the multicycle rapid thermal annealing (MRTA) process, has enabled the implantation and activation of p-type dopants in GaN. In this research, we demonstrate the symmetrical multicycle rapid thermal annealing (SMRTA) annealing process. The SMRTA annealing process includes an extra conventional annealing step after the rapid heating and cooling cycles and is shown to improve the crystalline structure of annealed GaN compared to the MRTA process.
The Electrochemical Society
Title: (Invited) From MRTA to SMRTA: Improvements in Activating Implanted Dopants in GaN
Description:
The implantation and activation of dopants in GaN is a key enabling step for future devices requiring selective area doping.
High temperatures (over 1300 ˚C) are required to activate p-type dopants in GaN.
These high temperatures are above the decomposition temperature of GaN, which necessitates advanced annealing processes.
One such process, the multicycle rapid thermal annealing (MRTA) process, has enabled the implantation and activation of p-type dopants in GaN.
In this research, we demonstrate the symmetrical multicycle rapid thermal annealing (SMRTA) annealing process.
The SMRTA annealing process includes an extra conventional annealing step after the rapid heating and cooling cycles and is shown to improve the crystalline structure of annealed GaN compared to the MRTA process.
Related Results
(Invited) From MRTA to SMRTA: Improvements in Activating Implanted Dopants in GaN
(Invited) From MRTA to SMRTA: Improvements in Activating Implanted Dopants in GaN
GaN and related compounds have received a great deal of attention from the research community due to their tunable direct bandgap, radiation hardness, and a favorable Baliga figure...
Highmobility AlGaN/GaN high electronic mobility transistors on GaN homo-substrates
Highmobility AlGaN/GaN high electronic mobility transistors on GaN homo-substrates
Gallium nitride (GaN) has great potential applications in high-power and high-frequency electrical devices due to its superior physical properties.High dislocation density of GaN g...
Studies on the Influences of i-GaN, n-GaN, p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors
Studies on the Influences of i-GaN, n-GaN, p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors
Systematic studies were performed on the influence of different cap layers of i-GaN, n-GaN, p-GaN and InGaN on AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on sapphi...
Novel approaches for robust polaritonics
Novel approaches for robust polaritonics
The possibility of having low-threshold, inversion-less lasers, makinguse of the macroscopic occupation, of the low density of states, at thebottom of the lower polariton branch, h...
GaN Growth Using GaN Buffer Layer
GaN Growth Using GaN Buffer Layer
High-quality gallium nitride (GaN) film was obtained for the first time using a GaN buffer layer on a sapphire substrate. An optically flat and smooth surface was obtained over a t...
MSG-Point-GAN: Multi-Scale Gradient Point GAN for Point Cloud Generation
MSG-Point-GAN: Multi-Scale Gradient Point GAN for Point Cloud Generation
The generative adversarial network (GAN) has recently emerged as a promising generative model. Its application in the image field has been extensive, but there has been little rese...
Advanced AlGaN/GaN HEMT technology, design, fabrication and characterization
Advanced AlGaN/GaN HEMT technology, design, fabrication and characterization
Nowadays, the microelectronics technology is based on the mature and very well established silicon (Si) technology. However, Si exhibits some important limitations regarding its vo...