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GaN Growth Using GaN Buffer Layer

High-quality gallium nitride (GaN) film was obtained for the first time using a GaN buffer layer on a sapphire substrate. An optically flat and smooth surface was obtained over a two-inch sapphire substrate. Hall measurement was performed on GaN films grown with a GaN buffer layer as a function of the thickness of the GaN buffer layer. For the GaN film grown with a 200 Å-GaN buffer layer, the carrier concentration and Hall mobility were 4×1016/cm3 and 600 cm2/V·s, respectively, at room temperature. The values became 8×1015/cm3 and 1500 cm2/V·s at 77 K, respectively. These values of Hall mobility are the highest ever reported for GaN films. The Hall measurement shows that the optimum thickness of the GaN buffer layer is around 200 Å.

IOP Publishing

Shuji Nakamura Shuji Nakamura

Japanese Journal of Applied Physics

2005

Title: GaN Growth Using GaN Buffer Layer

Description:

High-quality gallium nitride (GaN) film was obtained for the first time using a GaN buffer layer on a sapphire substrate.

An optically flat and smooth surface was obtained over a two-inch sapphire substrate.

Hall measurement was performed on GaN films grown with a GaN buffer layer as a function of the thickness of the GaN buffer layer.

For the GaN film grown with a 200 Å-GaN buffer layer, the carrier concentration and Hall mobility were 4×1016/cm3 and 600 cm2/V·s, respectively, at room temperature.

The values became 8×1015/cm3 and 1500 cm2/V·s at 77 K, respectively.

These values of Hall mobility are the highest ever reported for GaN films.

The Hall measurement shows that the optimum thickness of the GaN buffer layer is around 200 Å.

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GaN Growth Using GaN Buffer Layer

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