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Investigation of n-type GaN deposited on sapphire substrate with different small misorientations
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The ntype GaN films have been grown on cplane sapphire with different small misorientation（0°—03°）by metalorganic chemical vapor deposition. It was observed by atomic force microscopy that the ntype GaN has the step flow growth mode, the flow steps of the ntype GaN surface are uniformly distribution on 02° and 03° misorientation sapphire substrate, it was observed clearly that random and poor distribution of the flow steps was caused by the step reconstruction on 0° misorientation sapphire substrate. The image quality parameter of electron backscatter diffraction indicated that the strains increase as the ntype GaN epilayer thickness increases on 0° misorientation sapphire substrate but do not vary obviously on 02° and 03° misorientation sapphire substrates. Electrical and optical properties demonstrated the ntype GaN grown on the 02° and 03° misorientation sapphire substrates have higher electron concentration and lower ratio of the intensity of yellow band to near band edge.
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Title: Investigation of n-type GaN deposited on sapphire substrate with different small misorientations
Description:
The ntype GaN films have been grown on cplane sapphire with different small misorientation（0°—03°）by metalorganic chemical vapor deposition.
It was observed by atomic force microscopy that the ntype GaN has the step flow growth mode, the flow steps of the ntype GaN surface are uniformly distribution on 02° and 03° misorientation sapphire substrate, it was observed clearly that random and poor distribution of the flow steps was caused by the step reconstruction on 0° misorientation sapphire substrate.
The image quality parameter of electron backscatter diffraction indicated that the strains increase as the ntype GaN epilayer thickness increases on 0° misorientation sapphire substrate but do not vary obviously on 02° and 03° misorientation sapphire substrates.
Electrical and optical properties demonstrated the ntype GaN grown on the 02° and 03° misorientation sapphire substrates have higher electron concentration and lower ratio of the intensity of yellow band to near band edge.
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