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Strain Distribution near Si/NiSi 2 Interface Measured by Convergent Beam Electron Diffraction
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Lattice strain distribution was measured in Si (111) substrates near NiSi2 islands. Quantitative measurements with high spacial resolution were performed using convergent beam electron diffraction (CBED). Distorted and lower-symmetry CBED patterns were observed up to 2.0 µm from NiSi2 islands. We show that these CBED patterns can be accounted for by a combination of stress components with different orientations. Stresses were found to be tensile perpendicular to NiSi2 island edges and compressive parallel to them. In addition, another stress component which had a characteristic orientation was detectable within 0.5 µm of NiSi2 island edges.
Title: Strain Distribution near Si/NiSi 2 Interface Measured by Convergent Beam Electron Diffraction
Description:
Lattice strain distribution was measured in Si (111) substrates near NiSi2 islands.
Quantitative measurements with high spacial resolution were performed using convergent beam electron diffraction (CBED).
Distorted and lower-symmetry CBED patterns were observed up to 2.
0 µm from NiSi2 islands.
We show that these CBED patterns can be accounted for by a combination of stress components with different orientations.
Stresses were found to be tensile perpendicular to NiSi2 island edges and compressive parallel to them.
In addition, another stress component which had a characteristic orientation was detectable within 0.
5 µm of NiSi2 island edges.
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