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Effect of inhomogeneous Schottky barrier height of SnO 2 nanowires device
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Abstract
The current–voltage (
I
–
V
) characteristics of metal–semiconductor junction (Au–Ni/SnO
2
/Au–Ni) Schottky barrier in SnO
2
nanowires were investigated over a wide temperature range. By using the Schottky–Mott model, the zero bias barrier height Φ
B
was estimated from
I
–
V
characteristics, and it was found to increase with increasing temperature; on the other hand the ideality factor (
n
) was found to decrease with increasing temperature. The variation in the Schottky barrier and
n
was attributed to the spatial inhomogeneity of the Schottky barrier height. The experimental
I
–
V
characteristics exhibited a Gaussian distribution having mean barrier heights
Φ
¯
B
of 0.30 eV and standard deviation
σ
s
of 60 meV. Additionally, the Richardson modified constant was obtained to be 70 A cm
−2
K
−2
, leading to an effective mass of 0.58
m
0
. Consequently, the temperature dependence of
I
–
V
characteristics of the SnO
2
nanowire devices can be successfully explained on the Schottky–Mott theory framework taking into account a Gaussian distribution of barrier heights.
Title: Effect of inhomogeneous Schottky barrier height of SnO
2
nanowires device
Description:
Abstract
The current–voltage (
I
–
V
) characteristics of metal–semiconductor junction (Au–Ni/SnO
2
/Au–Ni) Schottky barrier in SnO
2
nanowires were investigated over a wide temperature range.
By using the Schottky–Mott model, the zero bias barrier height Φ
B
was estimated from
I
–
V
characteristics, and it was found to increase with increasing temperature; on the other hand the ideality factor (
n
) was found to decrease with increasing temperature.
The variation in the Schottky barrier and
n
was attributed to the spatial inhomogeneity of the Schottky barrier height.
The experimental
I
–
V
characteristics exhibited a Gaussian distribution having mean barrier heights
Φ
¯
B
of 0.
30 eV and standard deviation
σ
s
of 60 meV.
Additionally, the Richardson modified constant was obtained to be 70 A cm
−2
K
−2
, leading to an effective mass of 0.
58
m
0
.
Consequently, the temperature dependence of
I
–
V
characteristics of the SnO
2
nanowire devices can be successfully explained on the Schottky–Mott theory framework taking into account a Gaussian distribution of barrier heights.
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