Search engine for discovering works of Art, research articles, and books related to Art and Culture
Javascript must be enabled to continue!
Deep Level Investigation in Si-GaAs by Rapid Thermal Annealing
View through CrossRef
ABSTRACTDeep levels in undoped LEC semi-insulating (SI) GaAs have been investigated by rapid thermal annealing (RTA). The GaAs wafers were annealed for 10 sec in N2 atmosphere at temperatures ranging from 500 to 800 °C. Using photo-induced current transient spectroscopy (PITS) and Hall measurement, we have investigated the behavior of various deep levels as a function of RTA temperature and the phenomenon of thermal conversion. The change and even conversion in resistivity is related not only to decrease of the EL2 and EL6 defects, but also to shallow acceptor caused by arsenic-escaping in the surface of the wafer. Choosing proper RTA temperaturte will improve the electrical properties of SI-GaAs after RTA.
Title: Deep Level Investigation in Si-GaAs by Rapid Thermal Annealing
Description:
ABSTRACTDeep levels in undoped LEC semi-insulating (SI) GaAs have been investigated by rapid thermal annealing (RTA).
The GaAs wafers were annealed for 10 sec in N2 atmosphere at temperatures ranging from 500 to 800 °C.
Using photo-induced current transient spectroscopy (PITS) and Hall measurement, we have investigated the behavior of various deep levels as a function of RTA temperature and the phenomenon of thermal conversion.
The change and even conversion in resistivity is related not only to decrease of the EL2 and EL6 defects, but also to shallow acceptor caused by arsenic-escaping in the surface of the wafer.
Choosing proper RTA temperaturte will improve the electrical properties of SI-GaAs after RTA.
Related Results
Thermodynamic analysis of Al0.17Ga0.83As/GaAs (001) in annealing process
Thermodynamic analysis of Al0.17Ga0.83As/GaAs (001) in annealing process
For matching lattice parameters, AlGaAs alloy is usually grown on a GaAs (001) substrate. The AlGaAs/GaAs multilayer structure has been widely used to manufacture various photoelec...
Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
Surface morphologies of GaAs layers grown on (775)B-oriented GaAs substrates by molecular beam epitaxy were studied using atomic force microscopy. The surface of a GaAs layer gr...
Thermal Effects in High Compactness CEA Stack
Thermal Effects in High Compactness CEA Stack
Thermal management is a pivotal aspect of stack durability and system operability. Consequently, understanding the thermal mapping within a stack based on its operating conditions ...
GaAs/Ge/GaAs Sublattice Reversal Epitaxy on GaAs (100) and (111) Substrates for Nonlinear Optical Devices
GaAs/Ge/GaAs Sublattice Reversal Epitaxy on GaAs (100) and (111) Substrates for Nonlinear Optical Devices
Sublattice reversal epitaxy is demonstrated in lattice-matched
GaAs/Ge/GaAs (100) and (111) systems using molecular beam epitaxy, and confirmed
by reflection high energy elec...
Transport and optical properties of AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs heterostructures subjected to CH4/H2 reactive ion etching
Transport and optical properties of AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs heterostructures subjected to CH4/H2 reactive ion etching
We investigate the effect of methane/hydrogen (CH4/H2) reactive ion etching (RIE) and a subsequent annealing process on AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs heterostruc...
Study of ferroelectric switching and fatigue behaviors in poly(vinylidene fluoride-trifluoroethylene) copolymer nano-films
Study of ferroelectric switching and fatigue behaviors in poly(vinylidene fluoride-trifluoroethylene) copolymer nano-films
The nano-films of poly (vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer, with mole ratio of VDFTrFE 70/30, are deposited on titanium-metallized silicon wafer by spin...
Genesis of Significance of Carbonated Thermal Water Springs in Xining Basin, China
Genesis of Significance of Carbonated Thermal Water Springs in Xining Basin, China
There are 30 carbonate hot springs in Yaoshuitan geothermal field, Xining Basin, China, with a temperature of 18~41.5 °C; and there are 10 carbonate hot springs in Qijiachuan geoth...
Growth and Characterization of GaAs/GaSe/Si Heterostructures
Growth and Characterization of GaAs/GaSe/Si Heterostructures
We have grown and characterized epitaxial GaAs grown on layered structure GaSe on As-passivated Si(111) for the purpose of using layered structure GaSe as a lattice mismatch/therma...