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Band-Edge Photoluminescence of SiGe/Strained-Si/SiGe Type-II Quantum Wells on Si(100)
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High-quality completely lattice-relaxed SiGe buffer layer has been grown on Si(100) by using gas source molecular beam epitaxy. Pseudomorphic Si layer has been grown on this lattice-relaxed SiGe buffer layer to form SiGe/strained-Si/SiGe quantum wells. Intense band-edge photoluminescence has been observed from these quantum wells for the first time. Quantum confinement effect in SiGe/strained-Si/SiGe quantum well has been demonstrated from the systematic shift of photoluminescence energy peaks with the width of the quantum well.
Title: Band-Edge Photoluminescence of SiGe/Strained-Si/SiGe Type-II Quantum Wells on Si(100)
Description:
High-quality completely lattice-relaxed SiGe buffer layer has been grown on Si(100) by using gas source molecular beam epitaxy.
Pseudomorphic Si layer has been grown on this lattice-relaxed SiGe buffer layer to form SiGe/strained-Si/SiGe quantum wells.
Intense band-edge photoluminescence has been observed from these quantum wells for the first time.
Quantum confinement effect in SiGe/strained-Si/SiGe quantum well has been demonstrated from the systematic shift of photoluminescence energy peaks with the width of the quantum well.
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