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GaAs Schottky Photodiode Fabricated on Glass Substrate Using Epitaxial Lift-Off Technique
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We report on a substrate-side-illuminated GaAs Schottky photodiode fabricated on a glass substrate using the epitaxial lift-off technique. An external quantum efficiency in excess of 70% was observed at a wavelength of 780 nm. This is approximately 1.6 times higher than that of a conventional photodiode which has an absorption layer of the same thickness and is illuminated through a semitransparent Schottky window.
Title: GaAs Schottky Photodiode Fabricated on Glass Substrate Using Epitaxial Lift-Off Technique
Description:
We report on a substrate-side-illuminated GaAs Schottky photodiode fabricated on a glass substrate using the epitaxial lift-off technique.
An external quantum efficiency in excess of 70% was observed at a wavelength of 780 nm.
This is approximately 1.
6 times higher than that of a conventional photodiode which has an absorption layer of the same thickness and is illuminated through a semitransparent Schottky window.
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