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Characteristics of TlBr single crystals grown using the vertical Bridgman-Stockbarger method for semiconductor-based radiation detector applications
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AbstractTlBr single crystals grown using the vertical Bridgman-Stockbarger method were characterized for semiconductor based radiation detector applications. It has been shown that the vertical Bridgman-Stockbarger method is effective to grow high-quality single crystalline ingots of TlBr. The TlBr single crystalline sample, which was located 6 cm from the tip of the ingot, exhibited lower impurity concentration, higher crystalline quality, high enough bandgap (>2.7 eV), and higher resistivity (2.5 × 1011Ω·cm) which enables using the fabricated samples from the middle part of the TlBr ingot for fabricating high performance semiconductor radiation detectors.
Title: Characteristics of TlBr single crystals grown using the vertical Bridgman-Stockbarger method for semiconductor-based radiation detector applications
Description:
AbstractTlBr single crystals grown using the vertical Bridgman-Stockbarger method were characterized for semiconductor based radiation detector applications.
It has been shown that the vertical Bridgman-Stockbarger method is effective to grow high-quality single crystalline ingots of TlBr.
The TlBr single crystalline sample, which was located 6 cm from the tip of the ingot, exhibited lower impurity concentration, higher crystalline quality, high enough bandgap (>2.
7 eV), and higher resistivity (2.
5 × 1011Ω·cm) which enables using the fabricated samples from the middle part of the TlBr ingot for fabricating high performance semiconductor radiation detectors.
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