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Chemical beam epitaxy of InxAs1−xP/InP strained single and multiquantum well structures
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High-quality pseudomorphically strained InAsxP1−x/InP superlattices and strained multiquantum wells (SMQW) were grown by chemical beam epitaxy (CBE). The As versus P incorporation ratios in ternary InAsP layers is investigated showing that CBE is perfectly suited for a successful control of As composition in such heterostructures. InAs1−xPx/InAs SMQWs with As composition ranging from 30% to 70% were reproducibly realized. The control of InAsP well thickness and composition on the scale of the monolayer as determined through x-ray diffraction analysis is achieved.
Title: Chemical beam epitaxy of InxAs1−xP/InP strained single and multiquantum well structures
Description:
High-quality pseudomorphically strained InAsxP1−x/InP superlattices and strained multiquantum wells (SMQW) were grown by chemical beam epitaxy (CBE).
The As versus P incorporation ratios in ternary InAsP layers is investigated showing that CBE is perfectly suited for a successful control of As composition in such heterostructures.
InAs1−xPx/InAs SMQWs with As composition ranging from 30% to 70% were reproducibly realized.
The control of InAsP well thickness and composition on the scale of the monolayer as determined through x-ray diffraction analysis is achieved.
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