X-ray Topography and TEM Study of Crystal Defect Propagation in Epitaxially Grown AIGaAs Layers on GaAs(001)

AbstractAsymmetric crystal topography (ACT) in reflection and transmission electron microscopy (TEM) were used to investigate the crystal quality of both typical GaAs substrates and AIGaAs epitaxial layers grown on these substrates. ACT topographs of large sections of 75mm GaAs wafers revealed the presence of several types of crystal defects. All the GaAs wafers surveyed showed the presence of low angle grain boundaries which usually extended over a significant portion of the wafer. In addition, the well-known cell structure dislocation network was always observed in semi-insulating wafers. Less common but often present were inclusions and precipitates. The n-type (Si doped) substrates showed a typical cross-hatched pattern. ACT topography also easily revealed the crystal damage caused by wafer grinding.Epitaxial layers of AIGaAs were grown by conventional molecular beam epitaxy on these characterized GaAs substrates. ACT topography was used to examine separately the epitaxial layers and substrate crystals. Layers which were grown below the pseudomorphic limit showed crystal features identical to the GaAs substrate on which they were grown and the substrate was unaffected by the presence of the epitaxial layer. AJAs layers which were grown above the pseudomorphic limit were severely dislocated: TEM confirmed the presence of misfit dislocations at the interface. The substrate in this case also showed the presence of crosshatching indicating the the extension of the dislocation strain field into the substrate.