Search engine for discovering works of Art, research articles, and books related to Art and Culture
Javascript must be enabled to continue!
An Accurate Switching Transient Analytical Model for GaN HEMT under the Influence of Nonlinear Parameters
View through CrossRef
The Gallium Nitride high electron mobility transistor (GaN HEMT) has been considered as a potential power semiconductor device for high switching speed and high power density application since its commercialization. Compared with the traditional Si transistors, GaN HEMT has faster switching speed and lower on-off loss. As a result, it is more sensitive to the nonlinear parameters due to the fast switching speed. The subsequent voltage and current overshooting will affect the efficiency and safety of the GaN HEMT and power electronic systems. In this paper, an accurate switching transient analytical model for GaN HEMT is proposed, which considers the effects of parasitic inductances, nonlinear junction capacitances and nonlinear transconductance. The model characteristic of turn-ON process and turn-OFF process is illustrated in detail, and the equivalent circuits are derived for each switching transition. The accuracy of the proposed model can be verified by comparing the predicted switching waveform and switching loss with that of the experimental results based on the double pulse test (DPT) circuit. Compared with the conventional model, the proposed model is more accurate and matches better with the experimental results than the conventional model. Finally, this model can be used for analyzing the influences of gate resistance, nonlinear junction capacitances, and parasitic inductances on switching transient waveform and refining calculation switching loss.
Title: An Accurate Switching Transient Analytical Model for GaN HEMT under the Influence of Nonlinear Parameters
Description:
The Gallium Nitride high electron mobility transistor (GaN HEMT) has been considered as a potential power semiconductor device for high switching speed and high power density application since its commercialization.
Compared with the traditional Si transistors, GaN HEMT has faster switching speed and lower on-off loss.
As a result, it is more sensitive to the nonlinear parameters due to the fast switching speed.
The subsequent voltage and current overshooting will affect the efficiency and safety of the GaN HEMT and power electronic systems.
In this paper, an accurate switching transient analytical model for GaN HEMT is proposed, which considers the effects of parasitic inductances, nonlinear junction capacitances and nonlinear transconductance.
The model characteristic of turn-ON process and turn-OFF process is illustrated in detail, and the equivalent circuits are derived for each switching transition.
The accuracy of the proposed model can be verified by comparing the predicted switching waveform and switching loss with that of the experimental results based on the double pulse test (DPT) circuit.
Compared with the conventional model, the proposed model is more accurate and matches better with the experimental results than the conventional model.
Finally, this model can be used for analyzing the influences of gate resistance, nonlinear junction capacitances, and parasitic inductances on switching transient waveform and refining calculation switching loss.
Related Results
Highmobility AlGaN/GaN high electronic mobility transistors on GaN homo-substrates
Highmobility AlGaN/GaN high electronic mobility transistors on GaN homo-substrates
Gallium nitride (GaN) has great potential applications in high-power and high-frequency electrical devices due to its superior physical properties.High dislocation density of GaN g...
Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy
Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy
To improve the confinement of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) heterostructures, AlGaN/GaN/AlGaN double heterojunction HEMT...
Studies on the Influences of i-GaN, n-GaN, p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors
Studies on the Influences of i-GaN, n-GaN, p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors
Systematic studies were performed on the influence of different cap layers of i-GaN, n-GaN, p-GaN and InGaN on AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on sapphi...
Strain measurements at
AlGaN/GaN
HEMT
structures on Silicon substrates
Strain measurements at
AlGaN/GaN
HEMT
structures on Silicon substrates
High Electron Mobility Transistors (HEMTs) based on AlGaN/GaN are of great interest due to their high electrical performance and the related applications. The high carrier density,...
Advanced AlGaN/GaN HEMT technology, design, fabrication and characterization
Advanced AlGaN/GaN HEMT technology, design, fabrication and characterization
Nowadays, the microelectronics technology is based on the mature and very well established silicon (Si) technology. However, Si exhibits some important limitations regarding its vo...
Advances for Enhanced GaN-Based HEMT Devices with p-GaN Gate
Advances for Enhanced GaN-Based HEMT Devices with p-GaN Gate
With the development of high-voltage switches and high-speed RF circuits, the enhancement mode(E-mode) AlGaN/GaN HEMTs have become a hot topic in those fields. The E-mode GaN-based...
(Invited) Characterization of Metal/GaN Schottky Contacts - Review from the Early Days
(Invited) Characterization of Metal/GaN Schottky Contacts - Review from the Early Days
GaN-based materials have been intensively developed for blue light-emitting-diodes, blue laser diodes, power amplifiers in wireless base-stations, and high-power switching devices....
Research on biomolecule-gate AlGaN/GaN high-electron-mobility transistor biosensors
Research on biomolecule-gate AlGaN/GaN high-electron-mobility transistor biosensors
In order to enhance the performance of AlGaN/GaN high electron mobility transistor (HEMT) biosensor, millimeter grade AlGaN/GaN HEMT structure have been designed and successfully f...