Javascript must be enabled to continue!
Microstructure and mechanical properties of AlN/BN nanostructured multilayers
View through CrossRef
Monolithic AlN,BN films and AlN/BN multilayers were prepared by reactive magnetic sputtering. The films were characterized by X-ray diffraction, high-resolution transmission electron microscopy and nanoindentation. Results showed that the w-AlN phase and amorphous BN films structure exist in AlN and BN monolithic films. The crystal structure of BN layers in the multilayers depends on the thickness of BN layers. When the thickness of BN is less than 0.55nm, BN layers grew epitaxially with AlN under the influence of the “template effect" of w-AlN layers and form the same structure as AlN. When the thickness of BN is larger than 0.74nm, BN layers are amorphous. The hardness of AlN/BN multilayers also depends on the thickness of BN layers. When the thickness of BN is 1—2 molecular mono_layers, the superhardness enhancement of the multilayer is observed. The superhardness effect disappears when the thickness of BN is larger than 0.74nm. The critical thickness of BN layers marking the change from the crystalline to the amorphous structure has been calculated. The hardening mechanism of AlN/BN multilayers has been discussed. The main reason of the superhardness enhancement of the multilayer is the stress and modulus difference between the layers of BN and AlN.
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Title: Microstructure and mechanical properties of AlN/BN nanostructured multilayers
Description:
Monolithic AlN,BN films and AlN/BN multilayers were prepared by reactive magnetic sputtering.
The films were characterized by X-ray diffraction, high-resolution transmission electron microscopy and nanoindentation.
Results showed that the w-AlN phase and amorphous BN films structure exist in AlN and BN monolithic films.
The crystal structure of BN layers in the multilayers depends on the thickness of BN layers.
When the thickness of BN is less than 0.
55nm, BN layers grew epitaxially with AlN under the influence of the “template effect" of w-AlN layers and form the same structure as AlN.
When the thickness of BN is larger than 0.
74nm, BN layers are amorphous.
The hardness of AlN/BN multilayers also depends on the thickness of BN layers.
When the thickness of BN is 1—2 molecular mono_layers, the superhardness enhancement of the multilayer is observed.
The superhardness effect disappears when the thickness of BN is larger than 0.
74nm.
The critical thickness of BN layers marking the change from the crystalline to the amorphous structure has been calculated.
The hardening mechanism of AlN/BN multilayers has been discussed.
The main reason of the superhardness enhancement of the multilayer is the stress and modulus difference between the layers of BN and AlN.
Related Results
High-temperature production of AlN in Mg alloys with ammonia gas
High-temperature production of AlN in Mg alloys with ammonia gas
Abstract
The objective of this study was to produce composites with a uniform distribution of aluminum nitride (AlN) reinforcing particles in...
Seed-layer engineering of Mo/AlN piezoelectric stacked structures: Microstructure evolution and piezoelectric enhancement
Seed-layer engineering of Mo/AlN piezoelectric stacked structures: Microstructure evolution and piezoelectric enhancement
This work systematically studies how AlN, Ti, TiN and Ti/TiN seed layers modify the microstructure and piezoelectric properties of Mo/AlN stacks, targeting high-quality, low-stress...
The Effect of Menopause, Hormone Replacement Therapy (HRT), Alendronate (ALN), and Calcium Supplements on Saliva
The Effect of Menopause, Hormone Replacement Therapy (HRT), Alendronate (ALN), and Calcium Supplements on Saliva
Abstract
Purpose
In menopausal women many physiological changes take place, most of which are due to decreased estrogen production. It is known estrogen influences oral health in ...
Growth of High-Quality AlN and AlN/GaN/AlN Heterostructure on Sapphire Substrate
Growth of High-Quality AlN and AlN/GaN/AlN Heterostructure on Sapphire Substrate
Metalorganic chemical vapor deposition (MOCVD) growth of AlN on sapphire substrates was investigated, with the aim of device quality AlN/GaN/AlN double heterostructures. Growth...
Silicon diffusion and n-type doping in AlN
Silicon diffusion and n-type doping in AlN
Diffusion de silicium et dopage de type n dans le AlN
Dans cette thèse, nous menons une étude approfondie de la diffusion du silicium (Si) dans le nitrure d'alumini...
SUN-386 Treatment Outcomes of Intravenous Zoledronic Acid vs Oral Alendronate in Postmenopausal Women with Osteoporosis
SUN-386 Treatment Outcomes of Intravenous Zoledronic Acid vs Oral Alendronate in Postmenopausal Women with Osteoporosis
Abstract
In real practice, many patients with osteoporosis are poorly compliant with oral bisphosphonate, partly due to gastrointestinal side effects and partly due ...
Preparation of AlN/C composite foam through annealing recrystallization and its mechanical performance study
Preparation of AlN/C composite foam through annealing recrystallization and its mechanical performance study
Order to get a new type carbon foam material, AlN/C composite foam was successfully synthesized by using AlN as an additive and hollow microspheres/reticulated carbon foam as a bas...
Stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy
Stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy
The stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy (PA-MBE) has been studied. AlN nucleation layer and GaN layer we...

