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Growth of High-Quality AlN and AlN/GaN/AlN Heterostructure on Sapphire Substrate
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Metalorganic chemical vapor deposition (MOCVD) growth of AlN on sapphire substrates was investigated, with the aim of device quality AlN/GaN/AlN double heterostructures. Growth temperature as high as 1300° C was required to obtain AlN epitaxial layers with sharp X-ray diffraction peaks. By growing AlN at the high growth temperature, residual stress at the heterointerface was effectively reduced. The AlN epitaxial layers with smooth surfaces were grown using a low V/III ratio together with the high growth temperature. AlN/GaN/AlN double heterostructures with appropriate layer thicknesses for DH lasers and flat heterointerfaces were grown on sapphire substrates.
Title: Growth of High-Quality AlN and AlN/GaN/AlN Heterostructure on Sapphire Substrate
Description:
Metalorganic chemical vapor deposition (MOCVD) growth of AlN on sapphire substrates was investigated, with the aim of device quality AlN/GaN/AlN double heterostructures.
Growth temperature as high as 1300° C was required to obtain AlN epitaxial layers with sharp X-ray diffraction peaks.
By growing AlN at the high growth temperature, residual stress at the heterointerface was effectively reduced.
The AlN epitaxial layers with smooth surfaces were grown using a low V/III ratio together with the high growth temperature.
AlN/GaN/AlN double heterostructures with appropriate layer thicknesses for DH lasers and flat heterointerfaces were grown on sapphire substrates.
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