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Modification of Polyamide (PA) Films by Layers of Mixed Copper Sulfides–Copper Tellurides
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A polyamide film if treated with the sodium telluropentathionate, Na2TeS4O6, solution in hydrochloric acid, absorbs tellurium and sulfur in the form of telluropentathionate anion. The concentration of tellurium in PA film is higher, when polymer is treated with chalcogenation solution of higher concentration. Further interaction of chalcogenized PA films with Cu(I−II) salts solution leads to the formation of mixed copper chalcogenide layers on the polymer surface. Number of phases of copper chalcogenides were identified in the layers formed depending on the conditions of polyamide chalcogenation: orthorhombic anilite, Cu7S4 (72−617), hexagonal copper(I) telluride, Cu2Te (40−1325), monoclinic djurleite, Cu1.9375S (71−1383), orthorhombic copper sulfide, Cu1.8S (75−2241), hexagonal copper(I) telluride, Cu2Te (40−1325), orthorhombic copper(II) telluride, CuTe (13−258), and two tetragonal copper tellurides, Cu3.18Te2 (43−1402) and Cu2.72Te2 (43−1401). The sheet resistance of the layers formed depends on their chemical and phase composition, and varies from 4.39⋅10−3 to 3.31 kΩ/????.
Title: Modification of Polyamide (PA) Films by Layers of Mixed Copper Sulfides–Copper Tellurides
Description:
A polyamide film if treated with the sodium telluropentathionate, Na2TeS4O6, solution in hydrochloric acid, absorbs tellurium and sulfur in the form of telluropentathionate anion.
The concentration of tellurium in PA film is higher, when polymer is treated with chalcogenation solution of higher concentration.
Further interaction of chalcogenized PA films with Cu(I−II) salts solution leads to the formation of mixed copper chalcogenide layers on the polymer surface.
Number of phases of copper chalcogenides were identified in the layers formed depending on the conditions of polyamide chalcogenation: orthorhombic anilite, Cu7S4 (72−617), hexagonal copper(I) telluride, Cu2Te (40−1325), monoclinic djurleite, Cu1.
9375S (71−1383), orthorhombic copper sulfide, Cu1.
8S (75−2241), hexagonal copper(I) telluride, Cu2Te (40−1325), orthorhombic copper(II) telluride, CuTe (13−258), and two tetragonal copper tellurides, Cu3.
18Te2 (43−1402) and Cu2.
72Te2 (43−1401).
The sheet resistance of the layers formed depends on their chemical and phase composition, and varies from 4.
39⋅10−3 to 3.
31 kΩ/????.
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