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Demonstration of Diode-Pumped Yb:LaF3 and Tm,Ho:LaF3 Lasers
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Diode-pumped solid-state lasers using novel Yb:LaF3 and Tm,Ho:LaF3 crystals as laser gain materials are demonstrated herein. The Yb:LaF3 and Tm,Ho:LaF3 crystals were grown using the Bridgman method. By matching their absorption bands, continuous-wave laser operations were achieved for the first time. The Yb:LaF3 laser obtained a maximum average output power of 1.19 W with dual wavelengths of 1028 nm and 1033 nm. The maximum average output power and slope efficiency of the Tm,Ho:LaF3 laser were 574 mW and 18.5%, respectively. The Tm,Ho:LaF3 laser exhibited two peaks at 2043 nm and 2048 nm. Both the Yb:LaF3 and Tm,Ho:LaF3 crystals were confirmed to be laser gain materials.
Title: Demonstration of Diode-Pumped Yb:LaF3 and Tm,Ho:LaF3 Lasers
Description:
Diode-pumped solid-state lasers using novel Yb:LaF3 and Tm,Ho:LaF3 crystals as laser gain materials are demonstrated herein.
The Yb:LaF3 and Tm,Ho:LaF3 crystals were grown using the Bridgman method.
By matching their absorption bands, continuous-wave laser operations were achieved for the first time.
The Yb:LaF3 laser obtained a maximum average output power of 1.
19 W with dual wavelengths of 1028 nm and 1033 nm.
The maximum average output power and slope efficiency of the Tm,Ho:LaF3 laser were 574 mW and 18.
5%, respectively.
The Tm,Ho:LaF3 laser exhibited two peaks at 2043 nm and 2048 nm.
Both the Yb:LaF3 and Tm,Ho:LaF3 crystals were confirmed to be laser gain materials.
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