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Achieving High Current Gain and Low Emitter Resistance with the SiCx:F Widegap Emitter
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We investigated the relationship between current gain and emitter resistance of the heterojunction bipolar transistor using an SiC
x
terminated by fluorine atoms (SiC
x
:F) widegap emitter and achieved high current gain and low emitter resistance. The emitter resistance of about 40 Ω·µm2 and no relationship between current gain and emitter resistance indicate the absence of the interfacial oxide effect on the electrical characteristics. The compatibility of high current gain and low emitter resistance will lead to higher cut-off frequency due to decreased emitter charge storage.
Title: Achieving High Current Gain and Low Emitter Resistance with the SiCx:F Widegap Emitter
Description:
We investigated the relationship between current gain and emitter resistance of the heterojunction bipolar transistor using an SiC
x
terminated by fluorine atoms (SiC
x
:F) widegap emitter and achieved high current gain and low emitter resistance.
The emitter resistance of about 40 Ω·µm2 and no relationship between current gain and emitter resistance indicate the absence of the interfacial oxide effect on the electrical characteristics.
The compatibility of high current gain and low emitter resistance will lead to higher cut-off frequency due to decreased emitter charge storage.
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