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PROPERTIES OF INTERFACE OF a-Si:H/a-SiCx: H SUPERLATTICE
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The a-Si: H/a-SiCx: H superlattices were fabricated by r. f. plasma CVD. The blue shift of optical bandgap and construction of the superlattices were present. The interface abruptness was determined by low-angle X-ray diffraction. The constant photocurrent method and IR measurement showed that there existed excess hydrogen and high concentration of Si-C bonds at a-Si:H/a-SiCx:H interfaces. The thermal stability of interfacial hydrogen was poor. The interfacial defect density was about １．２×１０１１ｃｍ-2.
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Title: PROPERTIES OF INTERFACE OF a-Si:H/a-SiCx: H SUPERLATTICE
Description:
The a-Si: H/a-SiCx: H superlattices were fabricated by r.
f.
plasma CVD.
The blue shift of optical bandgap and construction of the superlattices were present.
The interface abruptness was determined by low-angle X-ray diffraction.
The constant photocurrent method and IR measurement showed that there existed excess hydrogen and high concentration of Si-C bonds at a-Si:H/a-SiCx:H interfaces.
The thermal stability of interfacial hydrogen was poor.
The interfacial defect density was about １．２×１０１１ｃｍ-2.
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