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Low-Temperature Selective Growth of ZnSe and ZnS on (001) GaAs Patterned with Carbonaceous Mask by Metalorganic Molecular-Beam Epitaxy
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Selective growth of ZnSe and ZnS on (001) GaAs substrates patterned with a carbonaceous mask was examined by metalorganic molecular-beam epitaxy. The minimum growth temperature to achieve selective growth of ZnSe was 400°C, while that for ZnS was the lower temperature of 300°C. These growth temperatures for selective growth are much lower than those reported up to now. The carbonaceous masks were deposited by electron-beam irradiation, and the deposition processes will be discussed in some detail. Submicron resolution with this low-temperature selective growth will be demonstrated.
Title: Low-Temperature Selective Growth of ZnSe and ZnS on (001) GaAs Patterned with Carbonaceous Mask by Metalorganic Molecular-Beam Epitaxy
Description:
Selective growth of ZnSe and ZnS on (001) GaAs substrates patterned with a carbonaceous mask was examined by metalorganic molecular-beam epitaxy.
The minimum growth temperature to achieve selective growth of ZnSe was 400°C, while that for ZnS was the lower temperature of 300°C.
These growth temperatures for selective growth are much lower than those reported up to now.
The carbonaceous masks were deposited by electron-beam irradiation, and the deposition processes will be discussed in some detail.
Submicron resolution with this low-temperature selective growth will be demonstrated.
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